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參數(shù)資料
| 型號(hào)： | CXK5V16100TM-85LLX |
| 廠商： | Sony Corporation |
| 英文描述： | 65536-word X 16-bit High Speed CMOS Static RAM |
| 中文描述： | 65536字× 16位高速CMOS靜態(tài)RAM |
| 文件頁(yè)數(shù)： | 8/10頁(yè) |
| 文件大?。?/td> | 153K |
| 代理商： | CXK5V16100TM-85LLX |
– 8 –
CXK5V16100TM
Address
OE
t
WC
t
AW
Data
valid
t
WP
t
DW
t
DH
High impedance
WE
Data out
Data in
t
CW
UB, LB
t
AS
t
BW
t
WR1
CE
(
3)
Write cycle (3) : UB, LB control
1
2
3
t
WR1
(for I/O1 to 8) is tested from either the rising edge of CE or LB, whichever comes earlier, until the end
of the write cycle.
t
WR1
(for I/O9 to 16) is tested from either the rising edge of CE or UB, whichever comes earlier, until the end
of the write cycle.
Write is executed when all of the CE, WE and (UB and, or LB) are at low simultaneously.
Do not apply the data input voltage of the opposite phase to the output while I/O pin is in output condition.
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| CXK5V8257BYM-10LL | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM-70LL | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BTM | 32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BYM-70LL | 32768-word X 8-bit High Speed CMOS Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
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| CXK5V81000ATM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5V81000ATM-10LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5V81000ATM-85LLX | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:131072-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
| CXK5V8257BM-10LL | 制造商:SONY 制造商全稱:Sony Corporation 功能描述:32768-word X 8-bit High Speed CMOS Static RAM |
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