參數(shù)資料
型號: CY27H010-35QMB
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 128K x 8 High-Speed CMOS EPROM
中文描述: 128K X 8 UVPROM, 35 ns, CQCC32
封裝: WINDOWED, HERMETIC SEALED, LCC-32
文件頁數(shù): 6/9頁
文件大?。?/td> 212K
代理商: CY27H010-35QMB
CY27H010
6
Typical DC and AC Characteristics
CLOCK PERIOD (ns)
NORMALIZED SUPPLY CURRENT
vs. CYCLE PERIOD
NORMALIZED ACCESS TIME
vs. AMBIENT TEMPERATURE
NORMALIZED SUPPLY CURRENT
vs. SUPPLY VOLTAGE
SUPPLY VOLTAGE (V)
AMBIENT TEMPERATURE (
°
C)
OUTPUT SOURCE CURRENT
vs. OUTPUT VOLTAGE
NORMALIZED ACCESS TIME
vs.SUPPLY VOLTAGE
120
100
60
40
20
0.0
1.0
2.0
3.0
4.0
0
80
OUTPUT SINK CURRENT
vs. OUTPUT VOLTAGE
V
CC
=5.0V
T
A
=25
°
C
–100
–80
–60
–40
–20
0.0
1.0
2.0
3.0
4.0
OUTPUT VOLTAGE (V)
OUTPUT SOURCE CURRENT vs.
OUTPUT VOLTAGE
0.0
5.0
SUPPLY VOLTAGE (V)
AMBIENT TEMPERATURE (
°
C)
OUTPUT VOLTAGE (V)
H010–8
1.1
1.0
0.9
0.8
0.7
0.6
0.0
50
100
150
200
0.5
250
1.7
1.6
1.3
1.2
1.1
1.0
0.7
0.6
0.5
4
4.5
5
5.5
6
V
CC
=5.5V
T
A
=25
°
C
f = 10 MHz
T
A
=25
°
C
0.8
0.9
1.4
1.5
1.25
1.2
1.15
1.1
1.05
1.0
0.9
0.85
0.8
–100
–50
0
50
100
150
V
=5.5V
f = 10 MHz
0.95
1.15
1.1
1.0
0.95
0.9
0.85
4
4.5
5
5.5
6
1.05
T
A =
25
°
C
1.2
1.25
1.4
1.3
1.2
1.1
1.0
0.9
–100
–50
0
50
100
0.8
150
V
CC
=4.5V
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