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參數(shù)資料
| 型號： | CY62137CV30LL |
| 廠商： | Cypress Semiconductor Corp. |
| 英文描述： | 2-Mbit (128K x 16) Static RAM |
| 中文描述： | 2兆位（128K的× 16）靜態(tài)RAM |
| 文件頁數(shù)： | 13/13頁 |
| 文件大?。?/td> | 339K |
| 代理商： | CY62137CV30LL |
CY62137CV30/33 MoBL
CY62137CV MoBL
Document #: 38-05201 Rev. *G
Page 13 of 13
Document History Page
Document Title: CY62137CV30/33 MoBL
and CY62137CV MoBL
2-Mbit (128K x 16) Static RAM
Document Number: 38-05201
Orig. of
Change
**
112393
02/19/02
GAV
New Data Sheet (advance information)
*A
114015
04/25/02
JUI
Added BV package diagram
Changed from Advance Information to Preliminary
*B
117064
07/12/02
MGN
Changed from Preliminary to Final
*C
118122
09/10/02
MGN
Added new part number: CY62137CV with wider voltage (2.7V – 3.6V)
Added new SL power bin for new part number
For T
AA
= 55 ns, improved t
PWE
min. from 45 ns to 40 ns
For T
AA
= 70 ns, improved t
PWE
min. from 50 ns to 45 ns
For T
AA
= 70 ns, improved t
LZWE
min. from 5 ns to 10 ns
*D
118761
09/23/02
MGN
Improved Typ. I
CC
spec to 7 mA (for 55 ns) and 5.5 mA (for 70 ns)
Improved Max I
CC
spec to 15 mA (for 55 ns) and 12 mA (for 70 ns)
For T
AA
= 55 ns, improved t
LZWE
min. from 5 ns to 10 ns
Changed upper spec. for Supply Voltage to Ground Potential to V
CC(max)
+ 0.5V
Changed upper spec. for DC Voltage Applied to Outputs in High-Z State and DC
Input Voltage to V
+ 0.3V
*E
343877
See ECN
PCI
Added Automotive Information in Operating Range, DC and Ordering Information
Table
*F
419237
See ECN
ZSD
Changed the address of Cypress Semiconductor Corporation on Page #1 from
“3901 North First Street” to “198 Champion Court”
Updated the ordering information table and replaced the Package name column
with Package diagram
*G
486789
See ECN
VKN
Removed part number CY62137CV25 from the product offering
Updated the ordering information table
REV.
ECN NO.
Issue Date
Description of Change
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY62137CV30LL-55BVXI | 2-Mbit (128K x 16) Static RAM |
| CY62137CV30LL-70BAE | 2-Mbit (128K x 16) Static RAM |
| CY62137CV30LL-70BVE | 2-Mbit (128K x 16) Static RAM |
| CY62137CV30LL-70BVXE | 2-Mbit (128K x 16) Static RAM |
| CY62137CV33LL | 2-Mbit (128K x 16) Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY62137CV30LL-55BAI | 制造商:Rochester Electronics LLC 功能描述:2MB (128K X 16)- SLOW ASYNCH SRAM - Bulk 制造商:Cypress Semiconductor 功能描述: |
| CY62137CV30LL-55BVI | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| CY62137CV30LL-55BVIT | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
| CY62137CV30LL-55BVXI | 功能描述:IC SRAM 2MBIT 55NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY62137CV30LL-55BVXIT | 功能描述:IC SRAM 2MBIT 55NS 48VFBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:MoBL® 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
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