參數(shù)資料
型號: CY7C006A-15AI
英文描述: x8 Dual-Port SRAM
中文描述: x8雙端口SRAM
文件頁數(shù): 17/20頁
文件大?。?/td> 301K
代理商: CY7C006A-15AI
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
Document #: 38-06051 Rev. *A
Page 6 of 20
Notes:
13. fMAX = 1/tRC. All inputs cycling at f = 1/tRC (except output enable). f = 0 means no address or control lines change. This applies only to inputs at CMOS level standby ISB3.
14. Tested initially and after any design or process changes that may affect these parameters.
Electrical Characteristics Over the Operating Range
Parameter
Description
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
-20
-25
Unit
Min.
Typ.
Max.
Min.
Typ.
Max.
VOH
Output HIGH Voltage (VCC = 3.3V)
2.4
V
VOL
Output LOW Voltage
0.4
V
VIH
Input HIGH Voltage
2.0
V
VIL
Input LOW Voltage
0.8
V
IOZ
Output Leakage Current
–10
10
–10
10
A
ICC
Operating Current (VCC = Max.,
IOUT = 0 mA) Outputs Disabled
Com’l.
120
175
115
165
mA
Ind.[12]
140
195
mA
ISB1
Standby Current (Both Ports TTL Level)
CEL & CER ≥ VIH, f = fMAX
[13]
Com’l.
35
45
30
40
mA
Ind.[12]
45
55
mA
ISB2
Standby Current (One Port TTL Level)
CEL | CER ≥ VIH, f = fMAX
[13]
Com’l.
75
110
65
95
mA
Ind.[12]
85
130
mA
ISB3
Standby Current (Both Ports CMOS Level)
CEL & CER ≥ VCC – 0.2V, f = 0
[13]
Com’l.
10
500
10
500
A
Ind.[12]
10
500
A
ISB4
Standby Current (One Port CMOS Level)
CEL | CER ≥ VIH, f = fMAX
[13]
Com’l.
70
95
60
80
mA
Ind.[12]
80
105
mA
Capacitance[14]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 3.3V
10
pF
COUT
Output Capacitance
10
pF
AC Test Loads and Waveforms
3.0V
GND
90%
10%
3ns
3 ns
10%
ALL INPUT PULSES
(a) Normal Load (Load 1)
R1 = 590
3.3V
OUTPUT
R2 = 435
C= 30 pF
VTH =1.4V
OUTPUT
C
= 30 pF
(b) ThéveninEquivalent (Load 1)
(c) Three-State Delay (Load 2)
R1 = 590
R2 = 435
3.3V
OUTPUT
C= 5pF
RTH = 250
including scope and jig)
(Used for tLZ, tHZ, tHZWE & tLZWE
相關PDF資料
PDF描述
CY7C006A-15JI x8 Dual-Port SRAM
CY7C007A-15AI x8 Dual-Port SRAM
CY7C007A-15JI x8 Dual-Port SRAM
CY7C008V Memory
CY7C009V Memory
相關代理商/技術參數(shù)
參數(shù)描述
CY7C006A-15AXC 功能描述:靜態(tài)隨機存取存儲器 5V 16Kx8 COM Dual Port 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C006A-15AXCT 功能描述:靜態(tài)隨機存取存儲器 5V 16Kx8 COM Dual Port 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C006A-15JC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Dual 5V 128K-Bit 16K x 8 15ns 68-Pin PLCC
CY7C006A-15JI 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 Dual-Port SRAM
CY7C006A-20AC 功能描述:IC SRAM 16KX8 DUAL 64LQFP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應商設備封裝:48-TSOP 包裝:托盤