參數(shù)資料
型號(hào): CY7C0851AV-167AXC
廠(chǎng)商: CYPRESS SEMICONDUCTOR CORP
元件分類(lèi): SRAM
英文描述: FLEx36™ 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
中文描述: 64K X 36 DUAL-PORT SRAM, 4 ns, PQFP176
封裝: 24 X 24 MM, 1.40 MM HEIGHT, LEAD FREE, TQFP-176
文件頁(yè)數(shù): 5/32頁(yè)
文件大?。?/td> 971K
代理商: CY7C0851AV-167AXC
CY7C0850AV, CY7C0851AV
CY7C0852AV, CY7C0853AV
Document #: 38-06070 Rev. *H
Page 13 of 32
Maximum Ratings
Exceeding maximum ratings[15] may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature................................ –65
°C to + 150°C
Ambient Temperature with
Power Applied ........................................... –55
°C to + 125°C
Supply Voltage to Ground Potential...............–0.5V to + 4.6V
DC Voltage Applied to
Outputs in High-Z State ......................... –0.5V to VDD + 0.5V
DC Input Voltage .............................. –0.5V to VDD + 0.5V[16]
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... > 2000V
(JEDEC JESD22-A114-2000B)
Latch-up Current .................................................... > 200 mA
Operating Range
Range
Ambient Temperature
VDD
Commercial
0
°C to +70°C
3.3V ± 165 mV
Industrial
–40
°C to +85°C
3.3V ± 165 mV
Electrical Characteristics
Over the Operating Range
Parameter
Description
-167
-133
-100
Unit
Min
Typ.
Max
Min
Typ.
Max
Min Typ.
Max
VOH
Output HIGH Voltage (VDD = Min., IOH= –4.0 mA)
2.4
V
VOL
Output LOW Voltage (VDD = Min., IOL= +4.0 mA)
0.4
V
VIH
Input HIGH Voltage
2.0
V
VIL
Input LOW Voltage
0.8
V
IOZ
Output Leakage Current
–10
10
–10
10
–10
10
μA
IIX1
Input Leakage Current Except TDI, TMS, MRST
–10
10
–10
10
–10
10
μA
IIX2
Input Leakage Current TDI, TMS, MRST
–0.1
1.0
–0.1
1.0
–0.1
1.0
mA
ICC
Operating Current for
(VDD = Max.,IOUT = 0 mA),
Outputs Disabled
CY7C0850AV
CY7C0851AV
CY7C0852AV
225
300
225
300
mA
CY7C0853AV
270
400
200
310
ISB1[18]
Standby Current (Both Ports TTL Level)
CEL and CER ≥ VIH, f = fMAX
90
115
90
115
90
115
mA
ISB2[18]
Standby Current (One Port TTL Level)
CEL | CER ≥ VIH, f = fMAX
160
210
160
210
160
210
mA
ISB3[18]
Standby Current (Both Ports CMOS Level)
CEL and CER ≥ VDD – 0.2V, f = 0
55
75
55
75
55
75
mA
ISB4[18]
Standby Current (One Port CMOS Level)
CEL | CER ≥ VIH, f = fMAX
160
210
160
210
160
210
mA
ISB5
Operating Current
(VDD = Max, IOUT = 0 mA, f = 0)
Outputs Disabled
CY7C0853AV
70
100
70
100
mA
Capacitance
Part Number[17]
Parameter
Description
Test Conditions
Max
Unit
CY7C0850AV,
CY7C0851AV, CY7C0852AV
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VDD = 3.3V
13
pF
COUT
Output Capacitance
10
pF
CY7C0853AV
CIN
Input Capacitance
22
pF
COUT
Output Capacitance
20
pF
Notes
15. The voltage on any input or I/O pin can not exceed the power pin during power up.
16. Pulse width < 20 ns.
17. COUT also references CI/O.
18. ISB1, ISB2, ISB3 and ISB4 are not applicable for CY7C0853AV because it can not be powered down by using chip enable pins.
相關(guān)PDF資料
PDF描述
CY7C0851AV-167BBC FLEx36&#153; 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0852AV-133BBC FLEx36&#153; 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0851AV-133AXI FLEx36&#153; 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0851AV-133BBI FLEx36&#153; 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
CY7C0851AV-167BBXC FLEx36&#153; 3.3V 32K/64K/128K/256K x 36 Synchronous Dual-Port RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C0851AV-167BBC 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 3.3V 2.25MBIT 64KX36 4NS 172FBGA - Trays 制造商:Rochester Electronics LLC 功能描述:
CY7C0851AV-167BBXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2MB (64Kx36) 3.3v 167MHz Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C0851V-133AC 制造商:Rochester Electronics LLC 功能描述:64K X 36 SYNC DPSRAM - Bulk 制造商:Cypress Semiconductor 功能描述:
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CY7C0851V-133AXCT 功能描述:IC SRAM 2MBIT 133MHZ 176LQFP RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:移動(dòng) SDRAM 存儲(chǔ)容量:256M(8Mx32) 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA(8x13) 包裝:帶卷 (TR) 其它名稱(chēng):557-1327-2