CY7C0850AV,CY7C0851V/CY7C0851AV
CY7C0852V/CY7C0852AV
CY7C0853V/CY7C0853AV
FLEx36 3.3 V 32K/64K/128K/256K x 36
Synchronous Dual-Port RAM
Cypress Semiconductor Corporation
198 Champion Court
San Jose
, CA 95134-1709
408-943-2600
Document #: 38-06070 Rev. *J
Revised November 23, 2010
Features
■ True dual-ported memory cells that allow simultaneous access
of the same memory location
■ Synchronous pipelined operation
■ Organization of 1-Mbit, 2-Mbit, 4-Mbit, and 9-Mbit devices
■ Pipelined output mode allows fast operation
■ 0.18-micron Complimentary metal oxide semiconductor
(CMOS) for optimum speed and power
■ High-speed clock to data access
■ 3.3 V low power
Active as low as 225 mA (typ)
Standby as low as 55 mA (typ)
■ Mailbox function for message passing
■ Global master reset
■ Separate byte enables on both ports
■ Commercial and industrial temperature ranges
■ IEEE 1149.1-compatible Joint test action group (JTAG)
boundary scan
■ 172-Ball fine-pitch ball grid array (FBGA) (1 mm pitch)
(15 mm × 15 mm)
■ 176-Pin thin quad plastic flatpack (TQFP) (24 mm × 24 mm ×
1.4 mm)
■ Counter wrap around control
Internal mask register controls counter wrap-around
Counter-interrupt flags to indicate wrap-around
Memory block retransmit operation
■ Counter readback on address lines
■ Mask register readback on address lines
■ Dual chip enables on both ports for easy depth expansion
Functional Description
The FLEx36 family includes 1M, 2M, 4M, and 9M pipelined,
synchronous, true dual-port static RAMs that are high-speed,
low-power 3.3 V CMOS. Two ports are provided, permitting
independent, simultaneous access to any location in memory.
The result of writing to the same location by more than one port
at the same time is undefined. Registers on control, address, and
data lines allow for minimal setup and hold time.
During a Read operation, data is registered for decreased cycle
time. Each port contains a burst counter on the input address
register. After externally loading the counter with the initial
address, the counter increments the address internally (more
details to follow). The internal Write pulse width is independent
of the duration of the R/W input signal. The internal Write pulse
is self-timed to allow the shortest possible cycle times.
A HIGH on CE0 or LOW on CE1 for one clock cycle powers down
the internal circuitry to reduce the static power consumption. One
cycle with chip enables asserted is required to reactivate the
outputs.
Additional features include: readback of burst-counter internal
address value on address lines, counter-mask registers to
control the counter wrap-around, counter interrupt (CNTINT)
flags, readback of mask register value on address lines,
retransmit functionality, interrupt flags for message passing,
JTAG for boundary scan, and asynchronous Master Reset
(MRST).
The CY7C0853V/CY7C0853AV device in this family has limited
Table 1. Product Selection Guide
Density
1-Mbit
(32K x 36)
2-Mbit
(64K x 36)
4-Mbit
(128K x 36)
9-Mbit
(256K x 36)
Part number
CY7C0850AV
CY7C0851V/
CY7C0851AV
CY7C0852V/
CY7C0852AV
CY7C0853V/
CY7C0853AV
Max. speed (MHz)
167
133
Max. access time - clock to data (ns)
4.0
4.7
Typical operating current (mA)
225
270
Package
176TQFP
172FBGA
176TQFP
172FBGA
176TQFP
172FBGA