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參數(shù)資料
| 型號： | CY7C09089-6AC |
| 英文描述： | x8 Dual-Port SRAM |
| 中文描述： | x8雙端口SRAM |
| 文件頁數(shù)： | 2/20頁 |
| 文件大?。?/td> | 301K |
| 代理商： | CY7C09089-6AC |
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
Document #: 38-06051 Rev. *A
Page 10 of 20
Notes:
29. R/W must be HIGH during all address transitions.
30. A write occurs during the overlap (tSCE or tPWE) of a LOW CE or SEM.
31. tHA is measured from the earlier of CE or R/W or (SEM or R/W) going HIGH at the end of write cycle.
32. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD) to allow the I/O drivers to turn off and
data to be placed on the bus for the required tSD. If OE is HIGH during an R/W controlled write cycle, this requirement does not apply and the write pulse
can be as short as the specified tPWE.
33. Transition is measured
±500 mV from steady state with a 5-pF load (including scope and jig). This parameter is sampled and not 100% tested.
34. To access RAM, CE = VIL, SEM = VIH.
35. During this period, the I/O pins are in the output state, and input signals must not be applied.
36. If the CE or SEM LOW transition occurs simultaneously with or after the R/W LOW transition, the outputs remain in the high-impedance state.
Switching Waveforms (continued)
tAW
tWC
tPWE
tHD
tSD
tHA
CE
R/W
OE
DATA OUT
DATA IN
ADDRESS
tHZOE
tSA
tHZWE
tLZWE
Write Cycle No. 1: R/W Controlled Timing[29, 30, 31, 32]
[33]
[32]
[34]
[35]
tAW
tWC
tSCE
tHD
tSD
tHA
CE
R/W
DATA IN
ADDRESS
tSA
Write Cycle No. 2: CE Controlled Timing[29, 30, 31, 36]
[34]
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