參數(shù)資料
型號(hào): CY7C09089V-12AXC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 3.3V 32K/64K/128K x 8/9 Synchronous Dual-Port Static RAM
中文描述: 64K X 8 DUAL-PORT SRAM, 25 ns, PQFP100
封裝: ROHS COMPLIANT, PLASTIC, MS-026, TQFP-100
文件頁數(shù): 18/20頁
文件大?。?/td> 599K
代理商: CY7C09089V-12AXC
CY7C09079V/89V/99V
CY7C09179V/89V/99V
Document #: 38-06043 Rev. *E
Page 7 of 20
Notes
14. Test conditions used are Load 2.
15. This parameter is guaranteed by design, but it is not production tested.
Switching Characteristics Over the Operating Range
Parameter
Description
CY7C09079V/89V/99V
CY7C09179V/89V/99V
Unit
-6[1]
-7[1]
-9
-12
Min
Max
Min
Max
Min
Max
Min
Max
fMAX1
fMax Flow-Through
53
45
40
33
MHz
fMAX2
fMax Pipelined
100
83
67
50
MHz
tCYC1
Clock Cycle Time - Flow-Through
19
22
25
30
ns
tCYC2
Clock Cycle Time - Pipelined
10
12
15
20
ns
tCH1
Clock HIGH Time - Flow-Through
6.5
7.5
12
ns
tCL1
Clock LOW Time - Flow-Through
6.5
7.5
12
ns
tCH2
Clock HIGH Time - Pipelined
4
5
6
8
ns
tCL2
Clock LOW Time - Pipelined
4
5
6
8
ns
tR
Clock Rise Time
3
ns
tF
Clock Fall Time
3
ns
tSA
Address Set-Up Time
3.5
4
ns
tHA
Address Hold Time
0
1
ns
tSC
Chip Enable Set-Up Time
3.5
4
ns
tHC
Chip Enable Hold Time
0
1
ns
tSW
R/W Set-Up Time
3.5
4
ns
tHW
R/W Hold Time
0
1
ns
tSD
Input Data Set-Up Time
3.5
4
ns
tHD
Input Data Hold Time
0
1
ns
tSAD
ADS Set-Up Time
3.5
4
ns
tHAD
ADS Hold Time
0
1
ns
tSCN
CNTEN Set-Up Time
3.5
4.5
5
ns
tHCN
CNTEN Hold Time
0
1
ns
tSRST
CNTRST Set-Up Time
3.5
4
ns
tHRST
CNTRST Hold Time
0
1
ns
tOE
Output Enable to Data Valid
8
9
10
12
ns
OE to Low Z
2
ns
OE to High Z
1
7
1
7
1
7
1
7
ns
tCD1
Clock to Data Valid - Flow-Through
15
18
20
25
ns
tCD2
Clock to Data Valid - Pipelined
6.5
7.5
9
12
ns
tDC
Data Output Hold After Clock HIGH
2
ns
tCKHZ[14, 15] Clock HIGH to Output High Z
2
9
2
9
2
9
2
9
ns
tCKLZ[14, 15] Clock HIGH to Output Low Z
2
ns
Port to Port Delays
tCWDD
Write Port Clock HIGH to Read Data Delay
30
35
40
ns
tCCS
Clock to Clock Set-Up Time
9
10
15
ns
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