- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄295376 > CY7C09289V-9AC SYNC SRAM|64KX16|CMOS|QFP|100PIN|PLASTIC PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C09289V-9AC |
| 英文描述： | SYNC SRAM|64KX16|CMOS|QFP|100PIN|PLASTIC |
| 中文描述： | 同步靜態(tài)存儲(chǔ)器| 64KX16 |的CMOS | QFP封裝| 100引腳|塑料 |
| 文件頁(yè)數(shù)： | 19/20頁(yè) |
| 文件大小： | 301K |
| 代理商： | CY7C09289V-9AC |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)當(dāng)前第19頁(yè)第20頁(yè)
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
Document #: 38-06051 Rev. *A
Page 8 of 20
Data Retention Mode
The CY7C0138AV/144AV/006AV/007AV and CY7C139AV/
145AV/016AV/017AV are designed with battery backup in
mind. Data retention voltage and supply current are guaran-
teed over temperature. The following rules ensure data reten-
tion:
1. Chip enable (CE) must be held HIGH during data retention, with-
in VCC to VCC – 0.2V.
2. CE must be kept between VCC – 0.2V and 70% of VCC
during the power-up and power-down transitions.
3. The RAM can begin operation >tRC after VCC reaches the
minimum operating voltage (3.0 volts).
Notes:
22. tBDD is a calculated parameter and is the greater of tWDD–tPWE (actual) or tDDD–tSD (actual).
23. CE = VCC, Vin = GND to VCC, TA = 25°C. This parameter is guaranteed but not tested.
tWB
R/W HIGH after BUSY (Slave)
0
ns
tWH
R/W HIGH after BUSY HIGH (Slave)
15
17
ns
tBDD
[22]
BUSY HIGH to Data Valid
20
25
ns
INTERRUPT TIMING[21]
tINS
INT Set Time
20
ns
tINR
INT Reset Time
20
ns
SEMAPHORE TIMING
tSOP
SEM Flag Update Pulse (OE or SEM)
10
12
ns
tSWRD
SEM Flag Write to Read Time
5
ns
tSPS
SEM Flag Contention Window
5
ns
tSAA
SEM Address Access Time
20
25
ns
Switching Characteristics Over the Operating Range[15] (continued)
Parameter
Description
CY7C138AV/144AV/006AV
CY7C139AV/145AV/016AV
CY7C007AV/017AV
Unit
-20
-25
Min.
Max.
Min.
Max.
Timing
Parameter
Test Conditions[23]
Max.
Unit
ICCDR1
@ VCCDR = 2V
50
A
Data Retention Mode
3.0V
VCC > 2.0V
VCC to VCC – 0.2V
VCC
CE
tRC
V
IH
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C09289V-9AI | x16 Dual-Port SRAM |
| CY7C09369V-9AC | SYNC SRAM|16KX18|CMOS|QFP|100PIN|PLASTIC |
| CY7C09369V-9AI | SYNC SRAM|16KX18|CMOS|QFP|100PIN|PLASTIC |
| CY7C09379V | Memory |
| CY7C09379V-12AC | x18 Dual-Port SRAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C09289V-9ACKJ | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C09289V-9ACT | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Sync Dual 3.3V 1M-Bit 64K x 16 20ns/9ns 100-Pin TQFP T/R |
| CY7C09289V-9AI | 功能描述:IC SRAM 1MB SYNC 100-TQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類(lèi)型:EEPROM 存儲(chǔ)容量:4K (512 x 8) 速度:400kHz 接口:I²C，2 線(xiàn)串口 電源電壓:2.7 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-SOIC（0.173"，4.40mm 寬） 供應(yīng)商設(shè)備封裝:8-MFP 包裝:帶卷 (TR) |
| CY7C09289V-9AIT | 制造商:Cypress Semiconductor 功能描述: |
| CY7C09289V-9AXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 3.3V 64Kx16 COM Sync Dual Port 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪(fǎng)問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。