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參數(shù)資料
| 型號： | CY7C109BL-15ZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 128K x 8 Static RAM |
| 中文描述： | 128K X 8 STANDARD SRAM, 15 ns, PDSO32 |
| 封裝： | 8 X 20 MM, TSOP1-32 |
| 文件頁數(shù)： | 12/12頁 |
| 文件大?。?/td> | 221K |
| 代理商： | CY7C109BL-15ZC |
CY7C109B
CY7C1009B
Document #: 38-05038 Rev. *A
Page 9 of 12
Ordering Information
Speed
(ns)
Ordering Code
Package
Name
Package Type
Operating
Range
12
CY7C109B-12VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C1009B-12VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-12ZC
Z32
32-Lead TSOP Type I
15
CY7C109B-15VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C109BL-15VC
V33
32-Lead (400-Mil) Molded SOJ
CY7C1009B-15VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-15ZC
Z32
32-Lead TSOP Type I
CY7C109BL-15ZC
Z32
32-Lead TSOP Type I
CY7C109B-15VI
V33
32-Lead (400-Mil) Molded SOJ
Industrial
CY7C109BL-15VI
V33
32-Lead (400-Mil) Molded SOJ
CY7C1009B-15VI
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-15ZI
Z32
32-Lead TSOP Type I
20
CY7C109B-20VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C1009B-20VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-20VI
V33
32-Lead (400-Mil) Molded SOJ
Industrial
CY7C109B-20ZC
Z32
32-Lead TSOP Type I
Commercial
CY7C109B-20ZI
Z32
32-Lead TSOP Type I
Industrial
25
CY7C109B-25VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C1009B-25VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-25VI
V33
32-Lead (400-Mil) Molded SOJ
Industrial
CY7C109B-25ZC
Z32
32-Lead TSOP Type I
Commercial
CY7C109B-25ZI
Z32
32-Lead TSOP Type I
Industrial
35
CY7C109B-35VC
V33
32-Lead (400-Mil) Molded SOJ
Commercial
CY7C1009B-35VC
V32
32-Lead (300-Mil) Molded SOJ
CY7C109B-35VI
V33
32-Lead (400-Mil) Molded SOJ
Industrial
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PDF描述 |
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| CY7C1157V18-333BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-333BZI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-333BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-333BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-375BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C109BN-12VC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C109BN-12ZC | 制造商:Rochester Electronics LLC 功能描述: 制造商:Cypress Semiconductor 功能描述: |
| CY7C109BN-12ZXC | 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C109BN-12ZXCT | 功能描述:IC SRAM 1MBIT 12NS 32TSOP RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:- 格式 - 存儲器:RAM 存儲器類型:移動 SDRAM 存儲容量:256M（8Mx32） 速度:133MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.95 V 工作溫度:-40°C ~ 85°C 封裝/外殼:90-VFBGA 供應(yīng)商設(shè)備封裝:90-VFBGA（8x13） 包裝:帶卷 (TR) 其它名稱:557-1327-2 |
| CY7C109BN-15VC | 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
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