- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄295373 > CY7C1157V18-333BZXC (CYPRESS SEMICONDUCTOR CORP) 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) PDF資料下載
參數(shù)資料
| 型號(hào)： | CY7C1157V18-333BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | SRAM |
| 英文描述： | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| 中文描述： | 2M X 9 DDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 24/27頁 |
| 文件大?。?/td> | 645K |
| 代理商： | CY7C1157V18-333BZXC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁當(dāng)前第24頁第25頁第26頁第27頁
CY7C1146V18, CY7C1157V18
CY7C1148V18, CY7C1150V18
Document Number: 001-06621 Rev. *D
Page 6 of 27
Pin Definitions
Pin Name
IO
Pin Description
DQ[x:0]
Input Output-
Synchronous
Data Input Output Signals. Inputs are sampled on the rising edge of K and K clocks when write
operations are valid. These pins drive out the requested data when a read operation is active. Valid
data is driven out on the rising edge of both the K and K clocks when read operations are active.
When read access is deselected, Q[x:0] are automatically tri-stated.
CY7C1146V18
DQ
[7:0]
CY7C1157V18
DQ
[8:0]
CY7C1148V18
DQ
[17:0]
CY7C1150V18
DQ
[35:0]
LD
Input-
Synchronous
Synchronous Load. This input is brought LOW when a bus cycle sequence is to be defined. This
definition includes address and read/write direction. All transactions operate on a burst of two data.
LD must meet the setup and hold times around edge of K.
NWS0, NWS1,
Input-
Synchronous
Nibble Write Select 0, 1
Active LOW.(CY7C1146V18 Only) Sampled on the rising edge of the K
and K clocks when the write operation is active. It is used to select the nibble that is written into the
device NWS0 controls D[3:0] and NWS1 controls D[7:4].
All the Nibble Write Selects are sampled on the same edge as the data. Deselecting a Nibble Write
Select causes the corresponding nibble of data to be ignored and not written into the device.
BWS0, BWS1,
BWS2, BWS3
Input-
Synchronous
Byte Write Select 0, 1, 2, and 3
Active LOW. Sampled on the rising edge of the K and K clocks
when the Write operation is active. It is used to select the byte that is written into the device when
the current portion of the write operation is active. Bytes not written remain unaltered.
CY7C1157V18
BWS
0 controls D[8:0]
CY7C1148V18
BWS
0 controls D[8:0], and BWS1 controls D[17:9].
CY7C1148V18
BWS
0 controls D[8:0], BWS1 controls D[17:9], BWS2 controls D[26:18], and BWS3
controls D[35:27].
All the Byte Write Selects are sampled on the same edge as the data. Deselecting a Byte Write Select
causes the corresponding byte of data to be ignored and not written into the device.
A
Input-
Synchronous
Address Inputs. Sampled on the rising edge of the K clock during active read and write operations.
These address inputs are multiplexed for both read and write operations. Internally, the device is
organized as 2M x 8 (two arrays each of1M x 8) for CY7C1146V18, 2M x 9 (two arrays each of 1M
x 9) for CY7C1157V18, 1M x 18 (two arrays each of 512K x 18) for CY7C1148V18, and 512K x 36
(two arrays each of 256K x 18) for CY7C1150V18. All the address inputs are ignored when the
appropriate port is deselected.
R/W
Input-
Synchronous
Synchronous Read/Write Input. When LD is LOW, this input designates the access type (read
when R/W is HIGH, write when R/W is LOW) for loaded address. R/W must meet the setup and hold
times around edge of K.
QVLD
Valid Output
Indicator
Valid Output Indicator. The Q Valid indicates valid output data. QVLD is edge aligned with CQ and
CQ.
K
Input-
Clock
Positive Input Clock Input. The rising edge of K is used to capture synchronous inputs to the device
and to drive out data through Q[x:0] when in single clock mode. All accesses are initiated on the rising
edge of K.
K
Input-
Clock
Negative Input Clock Input. K is used to capture synchronous inputs being presented to the device
and to drive out data through Q[x:0] when in single clock mode.
CQ
Clock Output Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input
clock (K) of the DDR-II+. The timings for the echo clocks are shown in the “Switching Characteristics”
CQ
Clock Output Synchronous Echo Clock Outputs. This is a free running clock and is synchronized to the input
clock (K) of the DDR-II+. The timings for the echo clocks are shown in the “Switching Characteristics”
ZQ
Input
Output Impedance Matching Input. This input is used to tune the device outputs to the system data
bus impedance. CQ, CQ, and Q[x:0] output impedance are set to 0.2 x RQ, where RQ is a resistor
connected between ZQ and ground. Alternatively, connect this pin directly to VDDQ, which enables
the minimum impedance mode. This pin cannot be connected directly to GND or left unconnected.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1157V18-333BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-375BZC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-375BZI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-375BZXC | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
| CY7C1157V18-375BZXI | 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1163KV18-400BZI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 400MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1163KV18-450BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 450MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1163KV18-550BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 550MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C11651KV18-400BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 QDR RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C11651KV18-400BZXC | 功能描述:IC SRAM 18MBIT 400MHZ 165-FPBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。