參數(shù)資料
型號(hào)： CY7C1157V18
廠商： Cypress Semiconductor Corp.
英文描述： 18-Mbit DDR-II+ SRAM 2-Word Burst Architecture (2.0 Cycle Read Latency)
中文描述： 18兆位的DDR - II SRAM的2字突發(fā)架構(gòu)（2.0周期讀寫延遲）
文件頁(yè)數(shù)： 2/27頁(yè)
文件大?。?/td> 969K
代理商： CY7C1157V18
CY7C1146V18
CY7C1157V18
CY7C1148V18
CY7C1150V18
Document Number: 001-06621 Rev. *C
Page 10 of 27
Write Cycle Descriptions
The write cycle descriptions of CY7C1146V18 and CY7C1148V18 follows. [3, 9]
BWS0/
NWS0
BWS1/
NWS1
K
Comments
L
L – H
–
When the Data portion of a write sequence is active
:
CY7C1146V18
both nibbles (D[7:0]) are written into the device,
CY7C1148V18
both bytes (D[17:0]) are written into the device.
L
–
L – H When the Data portion of a write sequence is active
:
CY7C1146V18
both nibbles (D[7:0]) are written into the device,
CY7C1148V18
both bytes (D[17:0]) are written into the device.
L
H
L – H
–
When the Data portion of a write sequence is active
:
CY7C1146V18
only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1148V18
only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
L
H
–
L – H When the Data portion of a write sequence is active
:
CY7C1146V18
only the lower nibble (D[3:0]) is written into the device, D[7:4] remains unaltered.
CY7C1148V18
only the lower byte (D[8:0]) is written into the device, D[17:9] remains unaltered.
H
L
L – H
–
When the Data portion of a write sequence is active:
CY7C1146V18
only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1148V18
only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
H
L
–
L – H When the Data portion of a write sequence is active
:
CY7C1146V18
only the upper nibble (D[7:4]) is written into the device, D[3:0] remains unaltered.
CY7C1148V18
only the upper byte (D[17:9]) is written into the device, D[8:0] remains unaltered.
H
L – H
–
No data is written into the devices when this portion of a write operation is active.
H
–
L – H No data is written into the devices when this portion of a write operation is active.
The write cycle descriptions of CY7C1146V18 follows. [3, 9]
BWS0
KK
Comments
L
L – H
–
When the Data portion of a write sequence is active
, the single byte (D[8:0]) is written into the device.
L
–
L – H When the Data portion of a write sequence is active
, the single byte (D[8:0]) is written into the device.
H
L – H
–
No data is written into the device when this portion of a write operation is active.
H
–
L – H No data is written into the device when this portion of a write operation is active.
Note
9. Is based on a Write cycle was initiated in accordance with the Write Cycle Description Truth Table. Alter BWS0, BWS1, BWS2, and BWS3 on different portions of a Write
cycle, as long as the setup and hold requirements are achieved.
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相關(guān)PDF資料
PDF描述
CY7C1161V18-300BZC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1161V18-300BZI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1161V18-333BZI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1161V18-333BZC 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
CY7C1161V18-300BZXI 18-Mbit QDR⑩-II+ SRAM 4-Word Burst Architecture (2.5 Cycle Read Latency)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1163KV18-400BZI 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 400MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1163KV18-450BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 450MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1163KV18-550BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 18MB (1Mx18) 1.8v 550MHz DDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C11651KV18-400BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 Sync 靜態(tài)隨機(jī)存取存儲(chǔ)器 QDR RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C11651KV18-400BZXC 功能描述:IC SRAM 18MBIT 400MHZ 165-FPBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲(chǔ)器:EEPROMs - 串行 存儲(chǔ)器類型:EEPROM 存儲(chǔ)容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁(yè)面:1445 (CN2011-ZH PDF)
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