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參數(shù)資料
| 型號： | CY7C130-25DC |
| 英文描述： | x8 Dual-Port SRAM |
| 中文描述： | x8雙端口SRAM |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 194K |
| 代理商： | CY7C130-25DC |
CY7C1019B/
CY7C10191B
Document #: 38-05026 Rev. *A
Page 5 of 9
Write Cycle No. 1 (CE Controlled)[12, 13]
Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[12, 13]
Notes:
12. Data I/O is high impedance if OE = VIH.
13. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.
14. During this period the I/Os are in the output state and input signals should not be applied.
Switching Waveforms (continued)
tWC
DATA VALID
tAW
tSA
tPWE
tHA
tHD
tSD
tSCE
CE
ADDRESS
WE
DATA I/O
tHD
tSD
tPWE
tSA
tHA
tAW
tSCE
tWC
tHZOE
DATAIN VALID
CE
ADDRESS
WE
DATA I/O
OE
NOTE 14
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PDF描述 |
|---|---|
| CY7C130-25LC | x8 Dual-Port SRAM |
| CY7C130-25PC | x8 Dual-Port SRAM |
| CY7C1302V25 | Memory |
| CY7C130-30DC | x8 Dual-Port SRAM |
| CY7C130-30DI | x8 Dual-Port SRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1302BV25-100BZC | 制造商:Cypress Semiconductor 功能描述:9MB PIPELINE QDR SRAM 2.5V CORE, FBGA, 2 WORD BURST - Trays |
| CY7C1302BV25-133BZC | 制造商:Cypress Semiconductor 功能描述:9MB PIPELINE QDR SRAM 2.5V CORE, FBGA, 2 WORD BURST - Trays |
| CY7C1302BV25-167BZC | 制造商:Cypress Semiconductor 功能描述:9MB PIPELINE QDR SRAM 2.5V CORE, FBGA, 2 WORD BURST - Trays |
| CY7C1302CV25-167BZC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1302DV25-167BZC | 功能描述:靜態(tài)隨機存取存儲器 512Kx18 2.5V QDR 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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