參數(shù)資料
型號: CY7C1338G-100BGXI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 4-Mbit (128K x 32) Flow-Through Sync SRAM
中文描述: 128K X 32 CACHE SRAM, 8 ns, PBGA119
封裝: 14 X 22 MM, 2.40 MM HEIGHT, LEAD FREE, BGA-119
文件頁數(shù): 8/17頁
文件大?。?/td> 291K
代理商: CY7C1338G-100BGXI
PRELIMINARY
CY7C1338G
Document #: 38-05521 Rev. *A
Page 8 of 17
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature .................................–65°C to +150°C
Ambient Temperature with
Power Applied.............................................–55°C to +125°C
Supply Voltage on V
DD
Relative to GND........–0.5V to +4.6V
DC Voltage Applied to Outputs
in tri-state ............................................ –0.5V to V
DDQ
+ 0.5V
DC Input Voltage....................................–0.5V to V
DD
+ 0.5V
Electrical Characteristics
Over the Operating Range
[8, 9]
Current into Outputs (LOW).........................................20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-up Current..................................................... >200 mA
Operating Range
Range
Commercial
Industrial
Ambient
Temperature
]
0°C to +70°C
–40°C to +85°C
V
DD
V
DDQ
2.5V –5%
to
V
DD
3.3V
5%/+10%
Parameter
V
DD
V
DDQ
V
OH
Description
Test Conditions
CY7C1338G
Min.
3.135
2.375
2.4
2.0
Unit
V
V
V
V
V
V
V
V
V
V
μ
A
Max.
3.6
V
DD
Power Supply Voltage
I/O Supply Voltage
Output HIGH Voltage
V
DDQ
= 3.3V, V
DD
= Min., I
OH
= –4.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OH
= –1.0 mA
V
DDQ
= 3.3V, V
DD
= Min., I
OL
= 8.0 mA
V
DDQ
= 2.5V, V
DD
= Min., I
OL
= 1.0 mA
V
DDQ
= 3.3V
V
DDQ
= 2.5V
V
DDQ
= 3.3V
V
DDQ
= 2.5V
GND
V
I
V
DDQ
V
OL
Output LOW Voltage
0.4
0.4
V
IH
Input HIGH Voltage
2.0
1.7
–0.3
–0.3
5
V
DD
+ 0.3V
V
DD
+ 0.3V
0.8
0.7
5
V
IL
Input LOW Voltage
[8]
I
X
Input Load Current (except ZZ and
MODE)
Input Current of MODE
Input = V
SS
Input = V
DD
Input = V
SS
Input = V
DD
GND
V
I
V
DD
, Output Disabled
V
DD
= Max., V
OUT
= GND
V
DD
= Max., I
OUT
= 0 mA,
f = f
MAX
= 1/t
CYC
–30
μ
A
μ
A
μ
A
μ
A
μ
A
μ
A
mA
mA
mA
mA
mA
mA
mA
5
Input Current of ZZ
–5
30
5
–300
225
220
205
90
85
80
40
I
OZ
I
OS
I
DD
Output Leakage Current
Output Short Circuit Current
V
DD
Operating Supply Current
–5
7.5-ns cycle, 133 MHz
8.0-ns cycle, 117 MHz
10-ns cycle, 100 MHz
7.5-ns cycle, 133 MHz
8.0-ns cycle, 117 MHz
10-ns cycle, 100 MHz
All speeds
I
SB1
Automatic CE Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
V
IH
or V
IN
V
IL
, f = f
MAX
,
inputs switching
I
SB2
Automatic CE Power-Down
Current—CMOS Inputs
Max. V
DD
, Device Deselected,
V
IN
V
DD
– 0.3V or V
IN
0.3V,
f = 0, inputs static
Max. V
DD
, Device Deselected,
V
IN
V
DDQ
– 0.3V or V
IN
0.3V,
f = f
MAX
, inputs switching
I
SB3
Automatic CE Power-Down
Current—CMOS Inputs
7.5-ns cycle, 133 MHz
8.0-ns cycle, 117 MHz
10-ns cycle, 100 MHz
All speeds
75
70
65
45
mA
mA
mA
mA
I
SB4
Automatic CE Power-Down
Current—TTL Inputs
Max. V
DD
, Device Deselected,
V
IN
V
DD
– 0.3V or V
IN
0.3V,
f = 0, inputs static
Shaded areas contain advance information.
Notes:
8. Overshoot: V
(AC) < V
+1.5V (Pulse width less than t
/2), undershoot: V
(AC) > -2V (Pulse width less than t
CYC
/2).
9.
TPower-up
: Assumes a linear ramp from 0v to V
DD
(min.) within 200ms. During this time V
IH
< V
DD
and V
DDQ
< V
DD.
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