參數(shù)資料
型號(hào)： CY7C1381C
廠商： Cypress Semiconductor Corp.
英文描述： 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
中文描述： 18 MB的（為512k × 36/1M × 18）流通過(guò)的SRAM
文件頁(yè)數(shù)： 6/36頁(yè)
文件大?。?/td> 564K
代理商： CY7C1381C
CY7C1381C
CY7C1383C
Document #: 38-05238 Rev. *B
Page 6 of 36
CY7C1381C–Pin Definitions
Name
TQFP
(3-Chip
Enable)
BGA
(1-Chip
Enable)
fBGA
(3-Chip
Enable)
I/O
Description
A
0
, A
1
, A
37,36,32,33,34,
35,42,43,44,45,
46,47,48,49,50,
81,82,99,100
P4,N4,A2,B2,C2
,R2,A3,B3,C3,T
3,T4,A5,B5,C5,
T5,A6,B6,C6,R6
R6,P6,A2,A10,
B2,B10,N6,P3,
P4,P8,P9,P10,
P11,R3,R4,R8,
R9,R10,R11
Input-
Synchronous
Address Inputs used to select one of the
512K address location
s. Sampled at the
rising edge of the CLK if ADSP or ADSC is
active LOW, and CE
1
,
CE
2
, and
CE
3[2]
are
sampled active. A
[1:0]
feed the 2-bit counter.
BW
A,
BW
B
BW
C,
BW
D
93,94,95,96
L5,G5,G3,L3
B5,A5,A4,B4
Input-
Synchronous
Byte Write Select Inputs, active LOW
.
Qualified with BWE to conduct byte writes to
the SRAM. Sampled on the rising edge of
CLK.
GW
88
H4
B7
Input-
Synchronous
Global Write Enable Input, active LOW
.
When asserted LOW on the rising edge of
CLK, a global write is conducted (ALL bytes
are written, regardless of the values on
BW
[A:D]
and BWE).
CLK
89
K4
B6
Input-
Clock
Clock Input
. Used to capture all
synchronous inputs to the device. Also used
to increment the burst counter when ADV is
asserted LOW, during a burst operation.
CE
1
98
E4
A3
Input-
Synchronous
Chip Enable 1 Input, active LOW
. Sampled
on the rising edge of CLK. Used in
conjunction with CE
2
and CE
3[2]
to
select/deselect the device. ADSP is ignored
if CE
1
is HIGH.
Chip Enable 2 Input, active HIGH
.
Sampled on the rising edge of CLK. Used in
conjunction with CE
1
and CE
3[2]
to
select/deselect the device.
CE
2
97
-
B3
Input-
Synchronous
CE
3[2]
92
-
A6
Input-
Synchronous
Chip Enable 3 Input, active LOW
. Sampled
on the rising edge of CLK. Used in
conjunction with CE
1
and
CE
2
to
select/deselect the device.
Output Enable, asynchronous input,
active LOW
. Controls the direction of the I/O
pins. When LOW, the I/O pins behave as
outputs. When deasserted HIGH, I/O pins
are tri-stated, and act as input data pins. OE
is masked during the first clock of a read
cycle when emerging from a deselected
state.
OE
86
F4
B8
Input-
Asynchronous
ADV
83
G4
A9
Input-
Synchronous
Advance Input signal, sampled on the
rising edge of CLK
. When asserted, it
automatically increments the address in a
burst cycle.
ADSP
84
A4
B9
Input-
Synchronous
Address Strobe from Processor, sampled
on the rising edge of CLK, active LOW
.
When asserted LOW, addresses presented
to the device are captured in the address
registers. A
[1:0]
are also loaded into the burst
counter. When ADSP and ADSC are both
asserted, only ADSP is recognized. ASDP is
ignored when CE
1
is deasserted HIGH
相關(guān)PDF資料
PDF描述
CY7C1381C-117AC 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1381C-117AI 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1381C-117BGC 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1381C-117BGI 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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CY7C1381C-100BGC 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:16MB (512KX36) 3.3V SYNC-FT SRAM - Bulk
CY7C1381C-100BGCT 制造商:Cypress Semiconductor 功能描述: 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY7C1381C-100BGI 制造商:Cypress Semiconductor 功能描述:
CY7C1381C-100BZC 制造商:Cypress Semiconductor 功能描述:
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