參數(shù)資料
型號(hào)： CY7C1382B-200BZC
英文描述： x18 SRAM
中文描述： x18的SRAM
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 194K
代理商： CY7C1382B-200BZC
CY7C1019B/
CY7C10191B
Document #: 38-05026 Rev. *A
Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND
[1] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[1].................................–0.5V to VCC + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Selection Guide
7C10191B-10
7C1019B-12
7C1019B-15
Maximum Access Time (ns)
10
12
15
Maximum Operating Current (mA)
150
140
130
Maximum Standby Current (mA)
10
L
1
Operating Range
Range
Ambient
Temperature[2]
VCC
Commercial
0°C to +70°C
5V
± 10%
Industrial
–40°C to +85°C
5V
± 10%
Electrical Characteristics Over the Operating Range
Test Conditions
7C10191B-10
7C1019B-12
7C1019B-15
Parameter
Description
Min.
Max.
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min.,
IOH = – 4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min.,
IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC
+ 0.3
2.2
VCC
+ 0.3
2.2
VCC
+ 0.3
V
VIL
Input LOW Voltage[1]
–0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIX
Input Load Current
GND < VI < VCC
–1+1
A
IOZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
–5+5
A
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
150
140
130
mA
ISB1
Automatic CE
Power-Down Current
—TTL Inputs
Max. VCC, CE > VIH
VIN > VIH or
VIN < VIL, f = fMAX
40
mA
L20
20
ISB2
Automatic CE
Power-Down Current
—CMOS Inputs
Max. VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
10
mA
L
11
Capacitance[3]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
6pF
COUT
Output Capacitance
8
pF
Notes:
1.
VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2.
TA is the “Instant On” case temperature.
3.
Tested initially and after any design or process changes that may affect these parameters.
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