參數(shù)資料
型號(hào)： CY7C1382BV25-166AC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類(lèi)： DRAM
英文描述： FUSE, FAST ACTING, 2A; Current, fuse rating:2A; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse type, RoHS Compliant: Yes
中文描述： 1M X 18 CACHE SRAM, 3.4 ns, PQFP100
封裝： 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁(yè)數(shù)： 8/30頁(yè)
文件大?。?/td> 860K
代理商： CY7C1382BV25-166AC
CY7C1380BV25
CY7C1382BV25
PRELIMINARY
8
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ plac-
es the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered
valid nor is the completion of the operation guaranteed. The
device must be deselected prior to entering the “sleep” mode.
CEs, ADSP and ADSC must remain inactive for the duration
of t
ZZREC
after the ZZ input returns LOW.
Interleaved Burst Sequence
First
Address
A
[1:0]]
00
01
10
11
Second
Address
A
[1:0]
01
00
11
10
Third
Address
A
[1:0]
10
11
00
01
Fourth
Address
A
[1:0]
11
10
01
00
Linear Burst Sequence
First
Address
A
[1:0]
00
01
10
11
Second
Address
A
[1:0]
01
10
11
00
Third
Address
A
[1:0]
10
11
00
01
Fourth
Address
A
[1:0]
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min.
Max.
Unit
I
DDZZ
Snooze mode
standby current
ZZ
>
V
DD
0.2V
15
mA
t
ZZS
Device operation to
ZZ
ZZ
>
V
DD
0.2V
2t
CYC
ns
t
ZZREC
ZZ recovery time
ZZ
<
0.2V
2t
CYC
ns
相關(guān)PDF資料
PDF描述
CY7C1382BV25-166BGC FUSE, FAST ACTING, 500MA; Current, fuse rating:500mA; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse RoHS Compliant: Yes
CY7C1382BV25-200AC FUSE, FAST ACTING, 5A; Current, fuse rating:5A; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, UL; Current, breaking capacity AC:50A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse type, blowing RoHS Compliant: Yes
CY7C1382BV25-200BGC FUSE, TIME DELAY, 100MA; Current, fuse rating:100mA; Case style:Radial; Voltage rating, AC:250V; Approval Bodies:CSA, IEC60127-3, SEMKO, UL, VDE; Current, breaking capacity AC:35A; Diameter, body:8.4mm; Diameter, lead:0.6mm; Fuse RoHS Compliant: Yes
CY7C1380BV25 512K x 36 / 1 Mb x 18 Pipelined SRAM
CY7C1380BV25-133AC 512K x 36 / 1 Mb x 18 Pipelined SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C1382C-167AC 功能描述:IC SRAM 18MBIT 167MHZ 100LQFP RoHS:否 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:- 標(biāo)準(zhǔn)包裝:96 系列:- 格式 - 存儲(chǔ)器:閃存 存儲(chǔ)器類(lèi)型:FLASH 存儲(chǔ)容量:16M（2M x 8，1M x 16） 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP（0.724"，18.40mm 寬） 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤(pán)
CY7C1382C-200AC 制造商:Cypress Semiconductor 功能描述:
CY7C1382C-200BZC 制造商:Rochester Electronics LLC 功能描述:16MB (1MX18) 3.3V SYNC-PIPE (SINGLE CYCLE DESELECT) SRAM - Bulk 制造商:Cypress Semiconductor 功能描述:
CY7C1382C-225AC 制造商:Cypress Semiconductor 功能描述:
CY7C1382D-167AXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 1Mx18 3.3V COM 1CD Sync PL 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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