參數(shù)資料
型號: CY7C1383C-100AI
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: DRAM
英文描述: 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
中文描述: 1M X 18 STANDARD SRAM, 8.5 ns, PQFP100
封裝: 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
文件頁數(shù): 1/36頁
文件大小: 564K
代理商: CY7C1383C-100AI
18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1381C
CY7C1383C
Cypress Semiconductor Corporation
Document #: 38-05238 Rev. *B
3901 North First Street
San Jose
,
CA 95134
408-943-2600
Revised February 26, 2004
Features
Supports 133-MHz bus operations
512K X 36/1M X 18 common I/O
3.3V –5% and +10% core power supply (V
DD
)
2.5V or 3.3V I/O supply (V
DDQ
)
Fast clock-to-output times
—6.5 ns (133-MHz version)
—7.5 ns (117-MHz version)
—8.5 ns (100-MHz version)
Provide high-performance 2-1-1-1 access rate
User-selectable burst counter supporting Intel
Pentium
interleaved or linear burst sequences
Separate processor and controller address strobes
Synchronous self-timed write
Asynchronous output enable
Offered in JEDEC-standard 100-pin TQFP ,119-ball BGA
and 165-ball fBGA packages
JTAG boundary scan for BGA and fBGA packages
“ZZ” Sleep Mode option
Functional Description
[1]
The CY7C1381C/CY7C1383C is a 3.3V, 512K x 36 and 1M x
18 Synchronous Flowthrough SRAMs, respectively designed
to interface with high-speed microprocessors with minimum
glue logic. Maximum access delay from clock rise is 6.5 ns
(133-MHz version). A 2-bit on-chip counter captures the first
address in a burst and increments the address automatically
for the rest of the burst access. All synchronous inputs are
gated by registers controlled by a positive-edge-triggered
Clock Input (CLK). The synchronous inputs include all
addresses, all data inputs, address-pipelining Chip Enable
(CE
), depth-expansion Chip Enables (CE
2
and
CE
3[2]
), Burst
Control inputs (ADSC, ADSP, and ADV), Write Enables (BW
x
,
and BWE), and Global Write (GW). Asynchronous inputs
include the Output Enable (OE) and the ZZ pin.
The CY7C1381C/CY7C1383C allows either interleaved or
linear burst sequences, selected by the MODE input pin. A
HIGH selects an interleaved burst sequence, while a LOW
selects a linear burst sequence. Burst accesses can be
initiated with the Processor Address Strobe (ADSP) or the
cache Controller Address Strobe (ADSC) inputs. Address
advancement is controlled by the Address Advancement
(ADV) input.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or
Address Strobe Controller (ADSC) are active. Subsequent
burst addresses can be internally generated as controlled by
the Advance pin (ADV).
The CY7C1381C/CY7C1383C operates from a +3.3V core
power supply while all outputs may operate with either a +2.5
or +3.3V supply. All inputs and outputs are JEDEC-standard
JESD8-5-compatible.
Selection Guide
133 MHz
6.5
210
70
117 MHz
7.5
190
70
100 MHz
8.5
175
70
Unit
ns
mA
mA
Maximum Access Time
Maximum Operating Current
Maximum CMOS Standby Current
1
2
3
4
5
6
Notes:
1. For best–practices recommendations, please refer to the Cypress application note
System Design Guidelines
on www.cypress.com.
2. CE
3,
CE
2
are for TQFP and 165 fBGA package only. 119 BGA is offered only in 1 Chip Enable.
相關(guān)PDF資料
PDF描述
CY7C1383C-100BGC 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1383C-100BGI 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1383C-100BZC 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1383C-100BZI 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
CY7C1383C-117AC 18-Mb (512K x 36/1M x 18) Flow-Through SRAM
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