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參數(shù)資料
| 型號： | CY7C1413AV18-250BZC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| 中文描述： | 2M X 18 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, MO-216, FBGA-165 |
| 文件頁數(shù)： | 9/28頁 |
| 文件大?。?/td> | 1143K |
| 代理商： | CY7C1413AV18-250BZC |
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CY7C1411AV18
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
Document Number: 38-05614 Rev. *C
Page 9 of 28
DLL
These chips utilize a Delay Lock Loop (DLL) that is designed
to function between 80 MHz and the specified maximum clock
frequency. During power-up, when the DOFF is tied HIGH, the
DLL gets locked after 1024 cycles of stable clock. The DLL can
also be reset by slowing or stopping the input clock K and K
for a minimum of 30 ns. However, it is not necessary for the
DLL to be specifically reset in order to lock the DLL to the
desired frequency. The DLL will automatically lock 1024 clock
cycles after a stable clock is presented.the DLL may be
disabled by applying ground to the DOFF pin. For information
refer to the application note “DLL Considerations in
QDRII/DDRII/QDRII+/DDRII+”.
Application Example
[1]
Vt = Vddq/2
C C#
D
A
K
C C#
D
A
K
BUS
MASTER
(CPU
or
ASIC)
SRAM #1
SRAM #4
DATA IN
DATA OUT
Address
RPS#
WPS#
BWS#
Source K
Source K#
Delayed K
Delayed K#
R = 50
ohms
R = 250
ohms
R = 250
ohms
R
P
S
#
W
P
S
#
B
W
S
#
R
P
S
#
W
P
S
#
B
W
S
#
Vt
Vt
Vt
R
R
R
ZQ
CQ/CQ#
Q
K#
ZQ
CQ/CQ#
Q
K#
CLKIN/CLKIN#
Truth Table
[2, 3, 4, 5, 6, 7]
Operation
Write Cycle:
Load address on the
rising edge of K;
input write data on
two consecutive K
and K rising edges.
Read Cycle:
Load address on the
rising edge of K; wait
one and a half cycle;
read data on two
consecutive C and C
rising edges.
NOP: No Operation L-H
K
RPS WPS
H
[8]
DQ
DQ
DQ
DQ
L-H
L
[9]
D(A) at K(t + 1)
↑
D(A + 1) at K(t +1)
↑
D(A + 2) at K(t + 2)
↑
D(A + 3) at K(t + 2)
↑
L-H
L
[9]
X
Q(A) at C(t + 1)
↑
Q(A + 1) at C(t + 2)
↑
Q(A + 2) at C(t + 2)
↑
Q(A + 3) at C(t + 3)
↑
H
H
D = X
Q = High-Z
Previous State
D = X
Q = High-Z
Previous State
D = X
Q = High-Z
Previous State
D = X
Q = High-Z
Previous State
Standby: Clock
Stopped
Stopped X
X
Notes:
1. The above application shows four QDR-II being used.
2. X = “Don't Care,” H = Logic HIGH, L = Logic LOW,
represents rising edge.
3. Device will power-up deselected and the outputs in a tri-state condition.
4. “A” represents address location latched by the devices when transaction was initiated. A + 1, A + 2, and A +3 represents the address sequence in the burst.
5. “t” represents the cycle at which a Read/write operation is started. t + 1, t + 2, and t + 3 are the first, second and third clock cycles respectively succeeding the
“t” clock cycle.
6. Data inputs are registered at K and K rising edges. Data outputs are delivered on C and C rising edges, except when in single clock mode.
7. It is recommended that K = K and C = C = HIGH when clock is stopped. This is not essential, but permits most rapid restart by overcoming transmission line
charging symmetrically.
8. If this signal was LOW to initiate the previous cycle, this signal becomes a “Don’t Care” for this operation.
9. This signal was HIGH on previous K clock rise. Initiating consecutive Read or Write operations on consecutive K clock rises is not permitted. The device will
ignore the second Read or Write request.
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
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| CY7C1413AV18-250BZI | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| CY7C1413AV18-250BZXC | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| CY7C1413AV18-250BZXI | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| CY7C1413AV18-278BZC | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| CY7C1413AV18-278BZI | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1413AV18-250BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 0.45NS 165FBGA - Bulk |
| CY7C1413AV18-250BZCT | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 QDR II Burst 4 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1413AV18250BZXC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1413AV18-250BZXC | 功能描述:靜態(tài)隨機存取存儲器 2Mx18 QDR II Burst 4 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1413AV18-250BZXI | 制造商:Cypress Semiconductor 功能描述: |
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