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參數(shù)資料
| 型號(hào)： | CY7C1413AV18-250BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| 中文描述： | 2M X 18 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁(yè)數(shù)： | 15/28頁(yè) |
| 文件大?。?/td> | 1143K |
| 代理商： | CY7C1413AV18-250BZXC |
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CY7C1411AV18
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
Document Number: 38-05614 Rev. *C
Page 15 of 28
TAP Controller Block Diagram
TAP Electrical Characteristics
Over the Operating Range
[17, 20, 12]
Parameter
V
OH1
V
OH2
V
OL1
V
OL2
V
IH
V
IL
I
X
Description
Test Conditions
I
OH
=
2.0 mA
I
OH
=
100
μ
A
I
OL
= 2.0 mA
I
OL
= 100
μ
A
Min.
1.4
1.6
Max.
Unit
V
V
V
V
V
V
μ
A
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input and Output Load Current
0.4
0.2
0.65V
DD
–0.3
–5
V
DD
+ 0.3
0.35V
DD
5
GND
≤
V
I
≤
V
DD
TAP AC Switching Characteristics
Over the Operating Range
[13, 14]
Parameter
t
TCYC
t
TF
t
TH
t
TL
Set-up Times
t
TMSS
t
TDIS
t
CS
Hold Times
t
TMSH
t
TDIH
t
CH
Notes:
12.These characteristic pertain to the TAP inputs (TMS, TCK, TDI and TDO). Parallel load levels are specified in the Electrical Characteristics Table.
13.t
and t
refer to the set-up and hold time requirements of latching data from the boundary scan register.
14.Test conditions are specified using the load in TAP AC test conditions. t
R
/t
F
= 1 ns.
Description
Min.
50
Max.
Unit
ns
MHz
ns
ns
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH
TCK Clock LOW
20
20
20
TMS Set-up to TCK Clock Rise
TDI Set-up to TCK Clock Rise
Capture Set-up to TCK Rise
5
5
5
ns
ns
ns
TMS Hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
5
5
5
ns
ns
ns
0
0
1
2
.
.
29
30
31
Boundary Scan Register
Identification Register
0
1
2
.
.
.
.
106
0
1
2
Instruction Register
Bypass Register
Selection
Circuitry
Selection
Circuitry
TAP Controller
TDI
TDO
TCK
TMS
[+] Feedback
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| CY7C1413AV18-250BZXI | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1413AV18-300BZC | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 2MX18 0.45NS 165FBGA - Bulk |
| CY7C1413AV18-300BZXC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 QDR II Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 COM RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1413BV18-200BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 QDR II Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1413BV18-250BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 2Mx18 QDR II Burst 4 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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