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參數(shù)資料
| 型號： | CY7C1415AV18-200BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| 中文描述： | 1M X 36 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 17/28頁 |
| 文件大?。?/td> | 1143K |
| 代理商： | CY7C1415AV18-200BZXC |
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CY7C1411AV18
CY7C1426AV18
CY7C1413AV18
CY7C1415AV18
Document Number: 38-05614 Rev. *C
Page 17 of 28
Scan Register Sizes
Register Name
Instruction
Bypass
ID
Boundary Scan
Bit Size
3
1
32
109
Instruction Codes
Instruction
Code
000
001
Description
EXTEST
IDCODE
Captures the Input/Output ring contents.
Loads the ID register with the vendor ID code and places the register
between TDI and TDO. This operation does not affect SRAM operation.
Captures the Input/Output contents. Places the boundary scan register
between TDI and TDO. Forces all SRAM output drivers to a High-Z
state.
Do Not Use: This instruction is reserved for future use.
Captures the Input/Output ring contents. Places the boundary scan
register between TDI and TDO. Does not affect the SRAM operation.
Do Not Use: This instruction is reserved for future use.
Do Not Use: This instruction is reserved for future use.
Places the bypass register between TDI and TDO. This operation does
not affect SRAM operation.
SAMPLE Z
010
RESERVED
SAMPLE/PRELOAD
011
100
RESERVED
RESERVED
BYPASS
101
110
111
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相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1415AV18-200BZXI | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| CY7C1415AV18-250BZC | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| CY7C1415AV18-250BZI | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| CY7C1415AV18-250BZXC | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
| CY7C1415AV18-250BZXI | 36-Mbit QDR⑩-II SRAM 4-Word Burst Architecture |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1415AV18-200CKA | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1415AV18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 1Mx36 QDR II Burst 4 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1415AV18-250BZCES | 制造商:Cypress Semiconductor 功能描述:SRAM SYNC DUAL 1.8V 36MBIT 1MX36 0.45NS 165FBGA - Bulk |
| CY7C1415AV18-250BZCT | 功能描述:靜態(tài)隨機存取存儲器 1Mx36 QDR II Burst 4 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1415AV18-250BZXC | 制造商:Cypress Semiconductor 功能描述: |
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