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參數資料
| 型號： | CY7C1510AV18-200BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| 中文描述： | 8M X 8 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數： | 26/26頁 |
| 文件大?。?/td> | 1074K |
| 代理商： | CY7C1510AV18-200BZXC |
PRELIMINARY
CY7C1510AV18
CY7C1525AV18
CY7C1512AV18
CY7C1514AV18
Document #: 001-06984 Rev. *B
Page 26 of 26
Document History Page
Document Title: CY7C1510AV18/CY7C1525AV18/CY7C1512AV18/CY7C1514AV18 72-Mbit QDR-II SRAM 2-Word Burst
Architecture
Document Number: 001-06984
Orig. of
Change
**
433241
See ECN
NXR
New Data Sheet
*A
462002
See ECN
NXR
Changed t
TCYC
from 100 ns to 50 ns, changed t
TH
and t
TL
from 40 ns to 20
ns, changed t
TMSS
, t
TDIS
, t
CS
, t
TMSH
, t
TDIH
, t
CH
from
10 ns to 5 ns and
changed t
TDOV
from 20 ns to 10 ns in TAP AC Switching Characteristics table
Modified Power-Up waveform
*B
503690
See ECN
VKN
Minor change: Moved data sheet to web
REV.
ECN No.
Issue Date
Description of Change
[+] Feedback
相關PDF資料 |
PDF描述 |
|---|---|
| CY7C1510AV18-200BZXI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1510AV18-250BZC | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1510AV18-250BZI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1510AV18-250BZXC | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1510AV18-250BZXI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
相關代理商/技術參數 |
參數描述 |
|---|---|
| CY7C15121TC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C15121YC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C15121YC-GBBC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1512-20VC | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1512-25SC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
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