- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄379083 > CY7C1512V18-200BZXC (CYPRESS SEMICONDUCTOR CORP) 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture PDF資料下載
參數(shù)資料
| 型號： | CY7C1512V18-200BZXC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類： | DRAM |
| 英文描述： | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| 中文描述： | 4M X 18 QDR SRAM, 0.45 ns, PBGA165 |
| 封裝： | 15 X 17 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165 |
| 文件頁數(shù)： | 11/27頁 |
| 文件大?。?/td> | 458K |
| 代理商： | CY7C1512V18-200BZXC |
第1頁第2頁第3頁第4頁第5頁第6頁第7頁第8頁第9頁第10頁當(dāng)前第11頁第12頁第13頁第14頁第15頁第16頁第17頁第18頁第19頁第20頁第21頁第22頁第23頁第24頁第25頁第26頁第27頁
CY7C1510V18
CY7C1525V18
CY7C1512V18
CY7C1514V18
Document #: 38-05489 Rev. *D
Page 11 of 27
H
H
H
L
L-H
During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written into
the device. D
[26:0]
will remain unaltered.
L-H During the Data portion of a Write sequence, only the byte (D
[35:27]
) is written into
the device. D
[26:0]
will remain unaltered.
-
No data is written into the device during this portion of a write operation.
H
H
H
L
-
H
H
H
H
L-H
H
H
H
H
-
L-H No data is written into the device during this portion of a write operation.
Write Cycle Descriptions
(CY7C1525V18)
BWS
0
L
K
K
–
Comments
L-H
During the Data portion of a Write sequence
:
CY7C1525V18
the single byte (D
[8:0]
) is written into the device
During the Data portion of a Write sequence
:
CY7C1525V18
the single byte (D
[8:0]
) is written into the device,
No data is written into the devices during this portion of a write operation.
L
–
L-H
H
L-H
–
H
–
L-H
No data is written into the devices during this portion of a write operation.
Write Cycle Descriptions
(CY7C1514V18) (continued)
[3, 9]
BWS
0
BWS
1
BWS
2
BWS
3
K
K
Comments
[+] Feedback
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| CY7C1512V18-200BZXI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1512V18-250BZI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1512V18-250BZXC | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1512V18-250BZXI | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
| CY7C1512V18-278BZC | 72-Mbit QDR-II⑩ SRAM 2-Word Burst Architecture |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C1512V18-200BZXCKU | 制造商:Cypress Semiconductor 功能描述: |
| CY7C1512V18-200BZXI | 功能描述:靜態(tài)隨機存取存儲器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機存取存儲器 RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1512V18-250BZC | 功能描述:靜態(tài)隨機存取存儲器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機存取存儲器 COM RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| CY7C1512V18-250BZCES | 制造商:Cypress Semiconductor 功能描述:72MB SRAM |
| CY7C1512V18-250BZI | 功能描述:靜態(tài)隨機存取存儲器 4Mx18 72M QDR II Burst 2 靜態(tài)隨機存取存儲器 IND RoHS:否 制造商:Cypress Semiconductor 存儲容量:16 Mbit 組織:1 M x 16 訪問時間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。