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參數(shù)資料
| 型號(hào)： | CY7C164-20PC |
| 廠商： | CYPRESS SEMICONDUCTOR CORP |
| 元件分類(lèi)： | SRAM |
| 英文描述： | 16K x 4 Static RAM |
| 中文描述： | 16K X 4 STANDARD SRAM, 20 ns, PDIP22 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-22 |
| 文件頁(yè)數(shù)： | 2/9頁(yè) |
| 文件大小： | 171K |
| 代理商： | CY7C164-20PC |
CY7C164
CY7C166
Document #: 38-05025 Rev. **
Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ............................................ –0.5V to +7.0V
DC Input Voltage[1] ........................................ –0.5V to +7.0V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0°C to +70°C
5V
± 10%
Electrical Characteristics Over the Operating Range
7C164-15
7C166-15
7C164-20
7C166-20
7C164-25, 35
7C166-25, 35
Parameter
Description
Test Conditions
Min.
Max.
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH
Voltage
VCC = Min.,
IOH = –4.0 mA
2.4
V
VOL
Output LOW
Voltage
VCC = Min.,
IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC
2.2
VCC
2.2
VCC
V
VIL
Input LOW
Voltage[1]
–0.5
0.8
–0.5
0.8
–0.5
0.8
V
IIX
Input Load Current
GND < VI < VCC
–5
+5
–5
+5
–5
+5
A
IOZ
Output Leakage
Current
GND < VO < VCC,
Output Disabled
–5
+5
–5
+5
–5
+5
A
IOS
Output Short
Circuit Current[2]
VCC = Max.,
VOUT = GND
–350
mA
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA
115
105
mA
ISB1
Automatic CE
Power-Down Current[3]
Max. VCC, CE > VIH,
Min. Duty Cycle = 100%
40
20
mA
ISB2
Automatic CE
Power-Down Current[3]
Max. VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V
or VIN < 0.3V
20
mA
Capacitance[4]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
10
pF
COUT
Output Capacitance
10
pF
Notes:
1.
Minimum voltage is equal to –3.0V for pulse durations less than 30 ns.
2.
Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
3.
A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.
4.
Tested initially and after any design or process changes that may affect these parameters.
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PDF描述 |
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| CY7C164-20VC | 16K x 4 Static RAM |
| CY7C164-25VC | 16K x 4 Static RAM |
| CY7C164-35PC | 16K x 4 Static RAM |
| CY7C164-35VC | 16K x 4 Static RAM |
| CY7C166-15PC | 16K x 4 Static RAM |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| CY7C16425PC | 制造商:CYPRESS 功能描述:* |
| CY7C164-25PC | 制造商:Cypress Semiconductor 功能描述: 制造商:Cypress Semiconductor 功能描述:Static RAM, 16Kx4, 22 Pin, Plastic, DIP |
| CY7C164-35PC | 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 64K-Bit 16K x 4-Bit 35ns 22-Pin PDIP 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C164-35VC | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| CY7C1643KV18-400BZC | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 144Mbit QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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