參數(shù)資料
型號(hào)： CY7C164-25PC
廠商： CYPRESS SEMICONDUCTOR CORP
元件分類： SRAM
英文描述： 16K x 4 Static RAM
中文描述： 16K X 4 STANDARD SRAM, 25 ns, PDIP22
封裝： 0.300 INCH, PLASTIC, DIP-22
文件頁(yè)數(shù)： 2/9頁(yè)
文件大?。?/td> 254K
代理商： CY7C164-25PC
CY7C164
CY7C166
Document #: 38-05025 Rev. *A
Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ............................................ –0.5V to +7.0V
DC Input Voltage[1]......................................... –0.5V to +7.0V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage........................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Selection Guide
CY7C164-15
CY7C166-15
CY7C164-25
CY7C166-25
Maximum Access Time (ns)
15
25
Maximum Operating Current (mA)
115
105
Maximum CMOS Standby Current (mA)
20
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0°C to +70°C
5V
± 10%
Electrical Characteristics Over the Operating Range
–15
–25
Parameter
Description
Test Conditions
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min., IOH = –4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min., IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC
2.2
VCC
V
VIL
Input LOW Voltage[1]
–0.5
0.8
–0.5
0.8
V
IIX
Input Leakage Current
GND < VI < VCC
–5
+5
–5
+5
A
IOZ
Output Leakage Current
GND < VO < VCC, Output Disabled
–5
+5
–5
+5
A
ICC
VCC Operating Supply Current
VCC = Max., IOUT = 0 mA
115
105
mA
ISB1
Automatic CE
Power-Down Current[2]
Max. VCC, CE > VIH,
Min. Duty Cycle = 100%
40
20
mA
ISB2
Automatic CE
Power-Down Current[2]
Max. VCC, CE > VCC – 0.3V,
VIN > VCC – 0.3V or VIN < 0.3V
20
mA
Capacitance[3]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
10
pF
COUT
Output Capacitance
10
pF
Notes:
1. Minimum voltage is equal to –3.0V for pulse durations less than 30 ns.
2. A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.
3. Tested initially and after any design or process changes that may affect these parameters.
相關(guān)PDF資料
PDF描述
CY7C164-15VC 16K x 4 Static RAM
CY7C164-20PC 16K x 4 Static RAM
CY7C164-20VC 16K x 4 Static RAM
CY7C164-25VC 16K x 4 Static RAM
CY7C164-35PC 16K x 4 Static RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C164-35PC 制造商:Cypress Semiconductor 功能描述:SRAM Chip Async Single 5V 64K-Bit 16K x 4-Bit 35ns 22-Pin PDIP 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY7C164-35VC 制造商:Rochester Electronics LLC 功能描述:- Bulk
CY7C1643KV18-400BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 144Mbit QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1643KV18-400BZXC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 CY7C1643KV18-400BZXC RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
CY7C1643KV18-450BZC 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 144Mbit QDR II 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray
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