參數(shù)資料
型號: CY7C164-35VC
廠商: CYPRESS SEMICONDUCTOR CORP
元件分類: SRAM
英文描述: 16K x 4 Static RAM
中文描述: 16K X 4 STANDARD SRAM, 35 ns, PDSO24
封裝: 0.300 INCH, PLASTIC, SOJ-24
文件頁數(shù): 2/9頁
文件大小: 171K
代理商: CY7C164-35VC
CY7C164
CY7C166
Document #: 38-05025 Rev. **
Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage to Ground Potential ............... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ............................................ –0.5V to +7.0V
DC Input Voltage[1] ........................................ –0.5V to +7.0V
Output Current into Outputs (LOW)............................. 20 mA
Static Discharge Voltage .......................................... >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current .................................................... >200 mA
Operating Range
Range
Ambient
Temperature
VCC
Commercial
0°C to +70°C
5V
± 10%
Electrical Characteristics Over the Operating Range
7C164-15
7C166-15
7C164-20
7C166-20
7C164-25, 35
7C166-25, 35
Parameter
Description
Test Conditions
Min.
Max.
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH
Voltage
VCC = Min.,
IOH = –4.0 mA
2.4
V
VOL
Output LOW
Voltage
VCC = Min.,
IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC
2.2
VCC
2.2
VCC
V
VIL
Input LOW
Voltage[1]
–0.5
0.8
–0.5
0.8
–0.5
0.8
V
IIX
Input Load Current
GND < VI < VCC
–5
+5
–5
+5
–5
+5
A
IOZ
Output Leakage
Current
GND < VO < VCC,
Output Disabled
–5
+5
–5
+5
–5
+5
A
IOS
Output Short
Circuit Current[2]
VCC = Max.,
VOUT = GND
–350
mA
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA
115
105
mA
ISB1
Automatic CE
Power-Down Current[3]
Max. VCC, CE > VIH,
Min. Duty Cycle = 100%
40
20
mA
ISB2
Automatic CE
Power-Down Current[3]
Max. VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V
or VIN < 0.3V
20
mA
Capacitance[4]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
10
pF
COUT
Output Capacitance
10
pF
Notes:
1.
Minimum voltage is equal to –3.0V for pulse durations less than 30 ns.
2.
Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
3.
A pull-up resistor to VCC on the CE input is required to keep the device deselected during VCC power-up, otherwise ISB will exceed values given.
4.
Tested initially and after any design or process changes that may affect these parameters.
相關(guān)PDF資料
PDF描述
CY7C166-15PC 16K x 4 Static RAM
CY7C164 16K x 4 Static RAM
CY7C166-15VC 16K x 4 Static RAM
CY7C166 16K x 4 Static RAM
CY7C199-35VIT 32K X 8 STANDARD SRAM, 35 ns, PDSO28
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