參數(shù)資料
型號: CY7C185-20VIT
英文描述: x8 SRAM
中文描述: x8的SRAM
文件頁數(shù): 2/9頁
文件大?。?/td> 194K
代理商: CY7C185-20VIT
CY7C1019B/
CY7C10191B
Document #: 38-05026 Rev. *A
Page 2 of 9
Maximum Ratings
(Above which the useful life may be impaired. For user guide-
lines, not tested.)
Storage Temperature ................................. –65°C to +150°C
Ambient Temperature with
Power Applied............................................. –55°C to +125°C
Supply Voltage on VCC to Relative GND
[1] .... –0.5V to +7.0V
DC Voltage Applied to Outputs
in High Z State[1] ....................................–0.5V to VCC + 0.5V
DC Input Voltage[1].................................–0.5V to VCC + 0.5V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage............................................ >2001V
(per MIL-STD-883, Method 3015)
Latch-Up Current ..................................................... >200 mA
Selection Guide
7C10191B-10
7C1019B-12
7C1019B-15
Maximum Access Time (ns)
10
12
15
Maximum Operating Current (mA)
150
140
130
Maximum Standby Current (mA)
10
L
1
Operating Range
Range
Ambient
Temperature[2]
VCC
Commercial
0°C to +70°C
5V
± 10%
Industrial
–40°C to +85°C
5V
± 10%
Electrical Characteristics Over the Operating Range
Test Conditions
7C10191B-10
7C1019B-12
7C1019B-15
Parameter
Description
Min.
Max.
Min.
Max.
Min.
Max.
Unit
VOH
Output HIGH Voltage
VCC = Min.,
IOH = – 4.0 mA
2.4
V
VOL
Output LOW Voltage
VCC = Min.,
IOL = 8.0 mA
0.4
V
VIH
Input HIGH Voltage
2.2
VCC
+ 0.3
2.2
VCC
+ 0.3
2.2
VCC
+ 0.3
V
VIL
Input LOW Voltage[1]
–0.3
0.8
–0.3
0.8
–0.3
0.8
V
IIX
Input Load Current
GND < VI < VCC
–1+1
A
IOZ
Output Leakage
Current
GND < VI < VCC,
Output Disabled
–5+5
A
ICC
VCC Operating
Supply Current
VCC = Max.,
IOUT = 0 mA,
f = fMAX = 1/tRC
150
140
130
mA
ISB1
Automatic CE
Power-Down Current
—TTL Inputs
Max. VCC, CE > VIH
VIN > VIH or
VIN < VIL, f = fMAX
40
mA
L20
20
ISB2
Automatic CE
Power-Down Current
—CMOS Inputs
Max. VCC,
CE > VCC – 0.3V,
VIN > VCC – 0.3V,
or VIN < 0.3V, f = 0
10
mA
L
11
Capacitance[3]
Parameter
Description
Test Conditions
Max.
Unit
CIN
Input Capacitance
TA = 25°C, f = 1 MHz,
VCC = 5.0V
6pF
COUT
Output Capacitance
8
pF
Notes:
1.
VIL (min.) = –2.0V for pulse durations of less than 20 ns.
2.
TA is the “Instant On” case temperature.
3.
Tested initially and after any design or process changes that may affect these parameters.
相關(guān)PDF資料
PDF描述
CY7C185-20ZC x8 SRAM
CY7C185-25DC x8 SRAM
CY7C185-25LC x8 SRAM
CY7C185-25PC x8 SRAM
CY7C185-25SCT x8 SRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY7C18525PC 制造商:CYPRESS 功能描述:*
CY7C185-25PC 功能描述:IC SRAM 64KBIT 25NS 28DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤
CY7C185-25SC 制造商:Cypress Semiconductor 功能描述:
CY7C18525VC 制造商:CYPRESS 功能描述:*
CY7C185-25VC 功能描述:IC SRAM 64KBIT 25NS 28SOJ RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標準包裝:96 系列:- 格式 - 存儲器:閃存 存儲器類型:FLASH 存儲容量:16M(2M x 8,1M x 16) 速度:70ns 接口:并聯(lián) 電源電壓:2.65 V ~ 3.6 V 工作溫度:-40°C ~ 85°C 封裝/外殼:48-TFSOP(0.724",18.40mm 寬) 供應(yīng)商設(shè)備封裝:48-TSOP 包裝:托盤