參數(shù)資料
型號(hào)： CY8C20334
廠商： Cypress Semiconductor Corp.
英文描述： PSoC Mixed-Signal Array(PSoC混合信號(hào)陣列)
中文描述： PSoC混合信號(hào)陣列（的PSoC混合信號(hào)陣列）
文件頁數(shù)： 15/32頁
文件大?。?/td> 378K
代理商： CY8C20334
September 18, 2006
Document No. 001-05356 Rev. *B
15
CY8C20234, CY8C20334, CY8C20434 Final Data Sheet
2. Electrical Specifications
2.3.5
DC Programming Specifications
The following table lists guaranteed maximum and minimum specifications for the voltage and temperature ranges: 4.75V to 5.25V
and -40
°
C
≤
T
A
≤
85
°
C, 3.0V to 3.6V and -40
°
C
≤
T
A
≤
85
°
C, or 2.4V to 3.0V and -40
°
C
≤
T
A
≤
85
°
C, respectively. Typical parameters
apply to 5V, 3.3V, or 2.7V at 25
°
C and are for design guidance only.
Table 2-9. DC Programming Specifications
Symbol
Vdd
IWRITE
I
DDP
V
ILP
V
IHP
I
ILP
Description
Min
Typ
Max
Units
Notes
Supply Voltage for Flash Write Operations
Supply Current During Programming or Verify
Input Low Voltage During Programming or Verify
Input High Voltage During Programming or Verify
Input Current when Applying Vilp to P1[0] or P1[1] During
Programming or Verify
Input Current when Applying Vihp to P1[0] or P1[1] During
Programming or Verify
Output Low Voltage During Programming or Verify
Output High Voltage During Programming or Verify
2.70
–
–
2.2
–
–
5
–
–
–
–
25
0.8
–
0.2
V
mA
V
V
mA
Driving internal pull-down resistor.
I
IHP
–
–
1.5
mA
Driving internal pull-down resistor.
V
OLV
V
OHV
–
Vdd
- 1.0
50,000
1,800,000
10
–
–
Vss + 0.75 V
V
Flash
ENPB
Flash
ENT
Flash
DR
Flash Endurance (per block)
Flash Endurance (total)
a
Flash Data Retention
–
–
–
–
–
–
–
–
Years
Erase/write cycles per block.
Erase/write cycles.
a. A maximumof 36 x 50,000 block endurance cycles is allowed. This may be balanced between operations on 36x1 blocks of 50,000 maximumcycles each, 36x2 blocks of
25,000 maximumcycles each, or 36x4 blocks of 12,500 maximumcycles each (to limt the total number of cycles to 36x50,000 and that no single block ever sees more than
50,000 cycles).
相關(guān)PDF資料
PDF描述
CY8C22213-24PVIT PSoC Mixed Signal Array
CY8C22113 PSoC Mixed Signal Array
CY8C22113-24PI PSoC Mixed Signal Array
CY8C22113-24SI PSoC Mixed Signal Array
CY8C22213 PSoC Mixed Signal Array
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
CY8C20334-12LFXI 功能描述:可編程片上系統(tǒng) - PSoC 20 I/O 8K Flash 512B RAM RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:67 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT
CY8C20334-12LFXIT 功能描述:可編程片上系統(tǒng) - PSoC 20 I/O 8K Flash 512B RAM RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:67 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT
CY8C20334-12LKXI 功能描述:可編程片上系統(tǒng) - PSoC 20 I/O 8K Flash 512B RAM RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:67 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT
CY8C20334-12LKXIT 功能描述:可編程片上系統(tǒng) - PSoC 20 I/O 8K Flash 512B RAM RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:67 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT
CY8C20334-12LQXI 功能描述:可編程片上系統(tǒng) - PSoC 20 I/O 8K FLASH 512B RAM RoHS:否 制造商:Cypress Semiconductor 核心:8051 處理器系列:CY8C36 數(shù)據(jù)總線寬度:8 bit 最大時(shí)鐘頻率:67 MHz 程序存儲(chǔ)器大小:32 KB 數(shù)據(jù) RAM 大小:4 KB 片上 ADC:Yes 工作電源電壓:0.5 V to 5.5 V 工作溫度范圍:- 40 C to + 85 C 封裝 / 箱體:QFN-68 安裝風(fēng)格:SMD/SMT
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