參數(shù)資料
型號: D1004UK
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: METAL GATE RF SILICON FET
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, DT, 6 PIN
文件頁數(shù): 3/4頁
文件大小: 35K
代理商: D1004UK
D1004UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
20
30
40
50
60
70
80
%
Efficiency
0
1
2
3
4
5
6
7
8
Pin W
Pout
Drain Efficiency
0
25
50
75
100
125
150
Pout
W
10
12
14
16
18
20
22
Gain
dB
0
1
2
3
4
5
6
7
8
Pin W
Pout
Gain
0
25
50
75
100
125
150
Pout
W
Figure 1 – Power Output and Efficiency
vs. Power Input.
Figure 2 – Power Output & Gain
vs. Power Input.
10
-45
-40
-35
-30
-25
-20
IMD
dBc
20
30
40
50
60
70
80
90
Pout W PEP
IMD3
Figure 3 – IMD vs. Output Power.
D1004UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
175MHz
Z
S
Z
L
2.2 + j1.9 3.2 - j0.5
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
V
DS
= 28V
f
1
= 175.0MHz
f
2
= 175.1MHz
I
DQ
= 0.4A
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
相關PDF資料
PDF描述
D1005UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(80W-28V-175MHz,單端))
D1005 METAL GATE RF SILICON FET
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D1006UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(120W-28V-175MHz,單端))
D1006UK METAL GATE RF SILICON FET
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