參數(shù)資料
型號: D1005UK
廠商: SEMELAB LTD
元件分類: 功率晶體管
英文描述: METAL GATE RF SILICON FET
中文描述: VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
封裝: CERAMIC, DM, 4 PIN
文件頁數(shù): 3/4頁
文件大?。?/td> 36K
代理商: D1005UK
D1005UK
Prelim. 6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0
20
40
60
80
100
120
140
Pout
W
0
1
2
3
4
Pin W
5
6
7
8
9
Pout
Drain Efficiency
20
30
40
50
60
70
80
90
Drain Efficiency
%
0
20
40
60
80
100
120
140
Pout
W
0
1
2
3
4
Pin W
5
6
7
8
9
Pout
Gain
11
12
13
14
15
16
17
18
Gain
dB
Figure 1 – Power Output and Efficiency
vs. Power Input.
Figure 2 – Power Output & Gain
vs. Power Input.
-50
-45
-40
-35
-30
-25
-20
-15
-10
IMD3
dBc
0
20
40
60
80
100
120
Pout W PEP
Idq = 0.4A
Figure 3 – IMD vs. Output Power.
D1005UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
175MHz
Z
S
Z
L
3 + j1
3 - j2.5
!Freq
MHz
50
100
150
200
250
300
350
400
450
500
S11
mag
0.95
0.94
0.94
0.93
0.94
0.95
0.96
0.96
0.97
0.98
S21
mag
4.29
3.32
2.26
1.59
1.2
0.94
0.72
0.59
0.46
0.35
S12
mag
0.006
0.006
0.01
0.019
0.031
0.042
0.052
0.064
0.073
0.091
S22
mag
0.66
0.75
0.84
0.88
0.92
0.93
0.96
0.98
1.00
1.00
ang
-58
-79
-104
-124
-140
-152
-161
-169
-177
177
ang
94
81
65
53
41
34
22
19
11
-2
ang
34
57
98
107
103
102
92
91
84
82
ang
-162
-164
-169
-175
-180
176
170
164
159
154
!
#
V
DS
= 28V, I
DQ
= 0.3A
MHZ
S MA R 50
Typical S Parameters
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
V
DS
= 28V
f
1
= 175.0MHz
f
2
= 175.1MHz
I
DQ
= 0.4A
V
DS
= 28V
I
DQ
= 0.4A
f = 175MHz
相關PDF資料
PDF描述
D1006UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(120W-28V-175MHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(120W-28V-175MHz,單端))
D1006UK METAL GATE RF SILICON FET
D1007UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(40W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(40W-28V-500MHz,推挽式))
D1007UK METAL GATE RF SILICON FET
D1008UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(80W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(80W-28V-500MHz,推挽式))
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