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參數(shù)資料
| 型號： | D1010UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(125W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(125W-28V-500MHz,推挽式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應管（為125W - 28V的- 500MHz的，推挽式）（鍍金多用的DMOS射頻硅場效應管（為125W - 28V的- 500MHz的，推挽式）） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 50K |
| 代理商： | D1010UK |
D1010UK
Prelim. 01/01
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukParameter
Test Conditions
PER SIDE
Min.
Typ.
Max.
Unit
70
4
1
7
1
3.2
10
50
20:1
240
120
10
V
GS
= 0
I
D
= 100mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
V
DS
= 0
V
DS
= V
GS
I
D
= 5A
P
O
= 125W
V
DS
= 28V
f = 400MHz
I
DQ
= 2A
V
DS
= 0
V
DS
= 28V
V
DS
= 28V
V
GS
=
–
5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25
°
C unless otherwise stated)
Drain
–
Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Gate Threshold Voltage*
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj
–
case
Thermal Resistance Junction
–
Case
Max. 0.5
°
C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
￡
2%
TOTAL D
PER SIDE
BV
DSS
I
DSS
I
GSS
V
GS(th)
g
fs
G
PS
h
VSWR
C
iss
C
oss
C
rss
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PDF描述 |
|---|---|
| D1010UK | METAL GATE RF SILICON FET |
| D1011UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應管(10W-28V-1GHz,單端式)) |
| D1011 | METAL GATE RF SILICON FET |
| D1011UK | METAL GATE RF SILICON FET |
| D1012UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應管(100W-28V-500MHz,推挽式)) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| D1011 | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:METAL GATE RF SILICON FET |
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| D101-15X | 制造商:TE Connectivity 功能描述:High Performance Cable 1Conductors 28AWG 0.69mm Silver Plated Copper Alloy White 600VAC |
| D101-18X | 功能描述:通用繼電器 WILMAR CLOSE DIFF RoHS:否 制造商:Omron Electronics 觸點形式:1 Form A (SPST-NO) 觸點電流額定值:150 A 線圈電壓:24 VDC 線圈電阻:144 Ohms 線圈電流:167 mA 切換電壓:400 V 安裝風格:Chassis 觸點材料: |
| D1011UK | 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET |
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