參數(shù)資料
型號(hào): D1012UK
英文描述: Gold Metallised Multi-Purpose Silicon DMOS RF FET(100W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(100W-28V-500MHz,推挽式))
中文描述: 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管(功率100W - 28V的- 500MHz的,推挽式)(鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管(功率100W - 28V的- 500MHz的,推挽式))
文件頁(yè)數(shù): 3/4頁(yè)
文件大?。?/td> 50K
代理商: D1012UK
D1012UK
Prelim. 11/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
0
2
4
6
8
1 0
1 2
1 4
P i n W
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
P o u t
W
0
1 0
2 0
3 0
4 0
5 0
6 0
7 0
D r a i n E f f i c i e n c y
%
P o u t
D r a i n E f f i c i e n c y
f = 5 0 0 M H z
Id q
= 1 . 2 A
V d s = 2 8 V
0
2
4
6
8
1 0
1 2
1 4
P i n W
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
P o u t
W
1 0
1 1
1 2
1 3
1 4
7
8
9
G a i n
d B
f = 5 0 0 M H z
Id q = 1 . 2 A
V d s = 2 8 V
0
2 0
4 0
6 0
8 0
1 0 0
1 2 0
1 4 0
P o u t W
P E P
- 4 5
- 4 0
- 3 5
- 3 0
- 2 5
- 2 0
- 1 5
I M D 3
d B c
f1
= 5 0 0 . 0 M H z
= 5 0 0 . 1 M H z
V d s = 2 8 V
Id q = 1 . 2 A
f2
Figure 1 - Power Output and Efficiency
vs. Power Input.
Figure 3 - IMD vs. Output Power.
Figure 2 - Power Output & Gain vs.
Power Input.
D1012UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
500
Z
S
W
Z
L
W
2.0 - j2.2
2.6 - j0.6
N.B. Impedances measured terminal to
terminal
相關(guān)PDF資料
PDF描述
D1012UK METAL GATE RF SILICON FET
D1013UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-500MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(20W-28V-500MHz,推挽式))
D1013UK METAL GATE RF SILICON FET
D1014UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-28V-400MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(20W-28V-400MHz,單端式))
D1015UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(125W-28V-400MHz,Push-Pull)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(125W-28V-400MHz,推挽式))
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