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參數(shù)資料
| 型號： | D1029UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(350W-28V-175MHz,Push-Pull)(鍍金多用DMOS射頻硅場效應(yīng)管(350W-28V-175MHz,推挽式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（350W的- 28V的- 175MHz時，推挽式）（鍍金多用的DMOS射頻硅場效應(yīng)管（350W的- 28V的- 175MHz時，推挽式）） |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 63K |
| 代理商： | D1029UK |
D1029UK
Prelim.12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.ukDIM
A
B
C
D
E
Millimetres
19.05
10.77
45°
9.78
5.71
27.94
1.52R
10.16
22.22
0.13
2.72
1.70
5.08
34.03
1.57R
Tol.
0.50
0.13
5°
0.13
0.13
0.13
0.13
0.13
MAX
0.02
0.13
0.13
0.50
0.13
0.08
Inches
0.75
0.424
45°
0.385
0.225
1.100
0.060R
0.400
0.875
0.005
0.107
0.067
0.200
1.340
0.062R
Tol.
0.020
0.005
5°
0.005
0.005
0.005
0.005
0.005
MAX
0.001
0.005
0.005
0.020
0.005
0.003
F
G
H
I
J
K
M
N
O
P
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
438W
70V
±20V
35A
–65 to 150°C
200°C
MECHANICAL DATA
M
K
J
I
O
N
A
C
(2 pls)
D
F
E
(4 pls)
B
G
(typ)
P
(2 pls)
1
5
4
3
2
H
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
350W – 28V – 175MHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
DR
PIN 1
PIN 3
PIN 5
SOURCE (COMMON)
DRAIN 2
GATE 1
PIN 2
PIN 4
DRAIN 1
GATE 2
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
* Per Side
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