參數(shù)資料
型號: D1031
廠商: TT electronics Semelab Limited
英文描述: METAL GATE RF SILICON FET
中文描述: 金屬門射頻硅場效應(yīng)管
文件頁數(shù): 4/9頁
文件大?。?/td> 304K
代理商: D1031
SH
Schnelle beschaltungslose Diode
Fast Hard Drive Diode
Datenblatt / Data sheet
D 1031SH
4/9
Seite/page
R,t – Werte
R
R,T-Werte
Analytische Elemente des transienten Wrmewiderstandes Z
thJC
Analytical elements of transient thermal impedance Z
thJC
Pos. n
1
2
3
4
5
6
7
R
thn
[°C/W]
0,00354
0,00373
0,00155
0,00093
0,00025
beidseitig
two-sided
τ
n
[s]
0,89646
0,11809
0,02822
0,00422
0,00134
R
thn
[°C/W]
0,0105
0,00039
0,00462
0,00116
0,00063
anodenseitg
anode-sided
τ
n
[s]
4,84218
0,25267
0,08834
0,00932
0,00185
R
thn
[°C/W]
0,01737
0,00024
0,00426
0,0013
0,00093
kathodenseitig
cathode-sided
τ
n
[s]
4,65326
0,74468
0,11266
0,02136
0,00359
Analytische Funktion / Analytical function:
Σ
n=1
=
τ
n
thn
thJC
n
-t
e
1
R
Z
0
0,005
0,01
0,015
0,02
0,025
0,03
0,001
0,01
0,1
1
10
100
t [s]
Z
t
c
a
d
Transienter innerer Wrmewiderstand für DC/ Transient thermal impedance Z
thJC
= f(t) for DC
Beidseitige Kühlung / Two-sided cooling
Anodenseitige Kühlung / Anode-sided cooling
Kathodenseitige Kühlung / Cathode-sided cooling
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