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參數(shù)資料
| 型號： | D1053 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應(yīng)管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 17K |
| 代理商： | D1053 |
D1053UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 3/95
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
175W
70V
±20V
5A
–65 to 150°C
200°C
MECHANICAL DATA
E
K
F
I
J
H
N
M
3
5
2
4
8
6
9
7
O
(2 pls)
(2C
D
G
1
A
A
B
B
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
50W – 28V – 1GHz
PUSH–PULL
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 7.5 dB MINIMUM
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from 400 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
I
J
K
M
N
O
mm
1.52
1.52
45°
16.38
6.35
18.41
12.70
5.08
24.76
1.52
0.81R
0.13
2.16
1.65R
Tol.
0.13
0.13
5°
0.26
0.13
0.13
0.26
0.13
0.13
0.13
0.13
0.02
0.13
0.13
Inches
0.060
0.060
45°
0.645
0.250
0.725
0.500
0.200
0.975
0.060
0.032R
0.005
0.085
0.065R
Tol.
0.005
0.005
5°
0.010
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.001
0.005
0.005
DB
PIN 1
PIN 3
PIN 5
PIN 7
PIN 9
SOURCE (COMMON)
DRAIN 2
DRAIN 4
GATE 3
GATE 1
PIN 2
PIN 4
PIN 6
PIN 8
DRAIN 1
DRAIN 3
GATE 4
GATE 2
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