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參數(shù)資料
| 型號(hào)： | D1093UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-28V-500MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(10W-28V-500MHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管（10W的- 28V的，500MHz的單端）（鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管（10W的- 28V的，500MHz的單端式）） |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 14K |
| 代理商： | D1093UK |
D1093UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 1/96
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
* Per Side
Power Dissipation
Drain – Source Breakdown Voltage *
Gate – Source Breakdown Voltage *
Drain Current *
Storage Temperature
Maximum Operating Junction Temperature
42W
65V
±20V
4A
–65 to 150°C
200°C
MECHANICAL DATA
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
10W – 28V – 500MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
VERY LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
SOT 171
PIN 1
SOURCE
PIN 3
GATE
PIN 5
SOURCE
PIN 2
SOURCE
PIN 4
DRAIN
PIN 6
SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 1 GHz
METAL GATE RF SILICON FET
TetraFET
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