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參數(shù)資料
| 型號(hào)： | D1094 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場(chǎng)效應(yīng)管 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 25K |
| 代理商： | D1094 |
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage *
g
fs
Forward Transconductance *
G
PS
Common Source Power Gain
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
D1094UK
Prelim. 3/00
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
http://www.semelab.co.uk65
6
6
7
1
1.08
11
50
20:1
72
36
3
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 20W
V
DS
= 28V
f = 400MHz
V
DS
= 0
V
DS
= 28V
V
DS
= 28V
V
DS
= 0
V
DS
= V
GS
I
D
= 0.6A
I
DQ
= 0.6A
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
m
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
h
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly
toxic and care must be taken during handling and mounting to avoid damage to this area.
THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
R
THj–case
Thermal Resistance Junction – Case
Max.3.5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
m
s , Duty Cycle
￡
2%
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| D1099 | 制造商:Smart Design 功能描述:Bulk |
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