參數(shù)資料
型號(hào): D2007UK
英文描述: Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(5W-28V-400MHz,單端式))
中文描述: 金鍍金屬多功能硅的DMOS射頻場(chǎng)效應(yīng)管(號(hào)5W - 28V的,400MHz的單端)(鍍金多用的DMOS射頻硅場(chǎng)效應(yīng)管(號(hào)5W - 28V的,400MHz的單端式))
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 17K
代理商: D2007UK
D2007UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 2/98
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
29W
65V
±20V
2A
–65 to 150°C
200°C
MECHANICAL DATA
1
2
3
4
A
M
F
E
D
C
B
H
J
I
G
K
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
5W – 28V – 400MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
LOW NOISE
HIGH GAIN – 13 dB MINIMUM
DA
PIN 1
SOURCE
PIN 2
DRAIN
PIN 3
SOURCE
PIN 4
GATE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
APPLICATIONS
VHF/UHF COMMUNICATIONS
from DC to 500 MHz
METAL GATE RF SILICON FET
TetraFET
相關(guān)PDF資料
PDF描述
D2007 METAL GATE RF SILICON FET
D2007UK METAL GATE RF SILICON FET
D2008UK Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-400MHz,Single Ended)(鍍金多用DMOS射頻硅場(chǎng)效應(yīng)管(5W-28V-400MHz,單端式))
D2008 METAL GATE RF SILICON FET
D2008UK METAL GATE RF SILICON FET
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