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參數(shù)資料
| 型號： | D2012 |
| 廠商： | Electronic Theatre Controls, Inc. |
| 英文描述： | Si NPN TRANSISTOR |
| 中文描述： | 硅NPN晶體管 |
| 文件頁數(shù)： | 1/1頁 |
| 文件大?。?/td> | 26K |
| 代理商： | D2012 |
YOUDA TRANSISTOR
D2012
Si NPN TRANSISTOR
D2012
DESCRIPTION AND FEATURES
*Collector-Emitter voltage: BV
CBO
= 60V
*Collector current up to 3A
*High h
FE
linearity
PIN CONFIGURATIONS
PIN
1
2
3
SYMBOL
Emitter
Collector
Base
ABSOLUTE MAXIMUM RATINGS
(Tamb=25
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
VALUE
60
50
7
30
1.5
3
7
0.6
+150
-55
UNIT
V
V
V
W
W
A
A
A
Tcase=25
Tamb=25
DC
Pulse
Collector Dissipation
P
CM
I
CM
Icp
I
B
Tj
Tstg
Collector Current
Base Current
Junction Temperature
Storage Temperature
+150
ELECTRICAL CHARACTERISTICS
(Tamb=25
,all voltage referenced to GND Unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Collector Cut-Off Current
Emitter Cut-Off Current
I
CBO
I
EBO
h
FE
1
h
FE
2
V
CE(sat)
V
BE(sat)
f
T
Vc
B
=50V, I
E
=0
V
EB
=5V, I
C
=0
Vc
E
=5V, I
C
=20mA
Vc
E
=5V, I
C
=0.5A
Ic=3A, I
B
=0.3A
Ic=2A, I
B
=0.2A
Vc
E
=5V, I
C
=0.1A
Vc
B
=10V,
I
E
=0,f=1MHz
100
100
400
0.5
2.0
nA
nA
30
100
200
0.3
1.0
5
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
V
V
MHz
Output Capacitance
Cob
80
pF
CLASSIFICATION OF h
FE
RANK
RANGE
Q
P
E
100
200
160
320
200
400
WuXi YouDa Electronics Co., Ltd
Add: No.5 Xijin Road, National Hi-Tech Industrial Development Zone, Wuxi Jiangsu China
Tel: 86-510-5205117 86-510-5205108 Fax: 86-510-5205110
Website: www.e-youda.com
SHENZHEN OFFICE Tel
86-755-83740369 13823533350 Fax
86-755-83741418
Ver 3.1 1 of 1 2004-9-20
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