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| 型號： | D2013 |
| 廠商： | TT electronics Semelab Limited |
| 英文描述： | METAL GATE RF SILICON FET |
| 中文描述： | 金屬門射頻硅場效應(yīng)管 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 58K |
| 代理商： | D2013 |
D2013UK
Prelim.12/00
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk
Figure 1OutputPower and Gain vs. Input Power.
Figure 2
Output Power and efficiency vs. Input Power.
Figure 3
IMD Vs. Output Power.
OPTIMUM SOURCE AND LOAD IMPEDANCE
Frequency
MHz
ZS
W
ZL
W
1000MHZ
1.3 - j4.6
2.5 - j2.6
#$
!"
!#
!Freq
!MHz
100
200
300
400
500
600
700
800
900
1000
S11
mag
0.841
0.871
0.891
0.902
0.923
0.933
0.955
0.955
0.966
0.955
S21
mag
24.547
11.482
6.683
4.365
3.055
2.113
1.758
1.413
1.161
0.944
S12
mag
0.01318
0.01
0.00653
0.00596
0.00891
0.01349
0.01862
0.02344
0.02851
0.03236
S22
mag
0.49
0.61
0.708
0.767
0.813
0.851
0.881
0.902
0.902
0.902
ang
-122
-146
-156
-163
-170
-174
-175
-177
179
177
ang
98
69
52
40
27
22
19
12
ang
13
ang
-94
-125
-137
-146
-155
-165
-166
-170
-177
-179
0
10
49
71
79
85
82
80
80
5
3
!
#
Vds=28V, Idq=0.8A
MHz S MA R 50
Typical S Parameters
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