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| 型號： | D2020UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(5W-28V-1GHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（號5W - 28V的- 1GHz的，單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（號5W - 28V的- 1GHz的，單端式）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 16K |
| 代理商： | D2020UK |
D2020UK
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 9/95
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 5W
V
DS
= 28V
f = 1GHz
V
DS
= 0V
V
DS
= 28V
V
DS
= 28V
V
DS
= 0
V
DS
= V
GS
I
D
= 0.4A
I
DQ
= 0.4A
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
65
2
1
5
1
0.36
13
40
20:1
24
12
1
R
THj–case
Thermal Resistance Junction – Case
Max. 6°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
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| D2021 | METAL GATE RF SILICON FET |
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| D2030UK | Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(5W-28V-1GHz,單端式)) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| D2021 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 2.3VA 2 X 15V |
| D2021 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 2.3VA 2X 15V |
| D2021UK | 制造商:TT Electronics / Semelab 功能描述:RF POWER TRANSISTOR MOSFET |
| D2022UK | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:METAL GATE RF SILICON FET |
| D2023 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 3.3VA 2 X 6V |
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