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參數(shù)資料
| 型號： | D2031UK |
| 英文描述： | Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(鍍金多用DMOS射頻硅場效應(yīng)管(7.5W-28V-1GHz,單端式)) |
| 中文描述： | 金鍍金屬多功能硅的DMOS射頻場效應(yīng)管（7.5W - 28V的- 1GHz的，單端）（鍍金多用的DMOS射頻硅場效應(yīng)管（7.5W - 28V的- 1GHz的，單端式）） |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 15K |
| 代理商： | D2031UK |
D2031UK
Prelim. 2/99
Semelab plc.
Telephone +44(0)1455) 556565. Fax +44(0)1455) 552612.
E-mail:
sales@semelab.co.uk
Website
http://www.semelab.co.uk
Parameter
Drain–Source
Breakdown Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
V
GS(th)
Gate Threshold Voltage*
g
fs
Forward Transconductance*
G
PS
Common Source Power Gain
η
Drain Efficiency
VSWR
Load Mismatch Tolerance
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Test Conditions
Min.
Typ.
Max.
Unit
BV
DSS
I
DSS
I
GSS
V
GS
= 0
I
D
= 10mA
V
DS
= 28V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 7.5W
V
DS
= 28V
f = 1GHz
V
DS
= 0V
V
DS
= 28V
V
DS
= 28V
V
DS
= 0
V
DS
= V
GS
I
D
= 0.6A
I
DQ
=0.3A
V
GS
= –5V f = 1MHz
V
GS
= 0
V
GS
= 0
f = 1MHz
f = 1MHz
V
mA
μ
A
V
S
dB
%
—
pF
pF
pF
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
65
3
1
7
0.5
0.54
13
40
20:1
36
18
1.5
R
THj–case
Thermal Resistance Junction – Case
Max. 5°C / W
THERMAL DATA
* Pulse Test:
Pulse Duration = 300
μ
s , Duty Cycle
≤
2%
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| D2032 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 6VA 2 X 6V |
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| D2032UK | 制造商:SEME-LAB 制造商全稱:Seme LAB 功能描述:ROHS COMPLIANT METAL GATE RF SILICON FET |
| D2033 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 6VA 2 X 9V |
| D2033 | 制造商:Dagnall Electronics 功能描述:TRANSFORMER 6VA 2X 9V |
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