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參數(shù)資料
| 型號(hào)： | D5006UK |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 125V V(BR)DSS | 21A I(D) | SOT-119VAR |
| 中文描述： | 晶體管| MOSFET的| N溝道| 125伏特的五（巴西）直| 21A條（?。﹟的SOT - 119VAR |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 17K |
| 代理商： | D5006UK |
D5006UK
Document Number 3592
Issue 1
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
350W
125V
±20V
21A
–65 to 150°C
200°C
MECHANICAL DATA
A
B
C
E
F
G
H
J
D
1
5
6
4
3
2
Q
P
O
N
K
M
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
150W – 50V – 175MHz
SINGLE ENDED
FEATURES
SIMPLIFIED AMPLIFIER DESIGN
SUITABLE FOR BROAD BAND APPLICATIONS
LOW C
rss
SIMPLE BIAS CIRCUITS
HIGH GAIN – 13 dB MINIMUM
DV
PIN 1
SOURCE
PIN 3
SOURCE
PIN 5
GATE
PIN 2
DRAIN
PIN 4
SOURCE
PIN 6
SOURCE
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25
°
C unless otherwise stated)
APPLICATIONS
HF/VHF/UHF COMMUNICATIONS
from 1 MHz to 200 MHz
METAL GATE RF SILICON FET
TetraFET
DIM
A
B
C
D
E
F
G
H
J
K
M
N
O
P
Q
mm
9.09
19.3
45
°
5.71
1.65R
9.78
20.32
19.30
1.52R
10.77
22.86
3.17
0.13
4.19
6.35
Tol.
0.13
0.13
5
°
0.13
0.13
0.13
0.25
0.13
0.13
0.13
0.13
0.13
0.02
0.13
REF
Inches
0.358
0.760
45
°
0.225
0.065R
0.385
0.800
0.760
0.060R
0.424
0.900
0.125
0.005
0.165
0.250
Tol.
0.005
0.005
5
°
0.005
0.005
0.005
0.010
0.005
0.005
0.005
0.005
0.005
0.001
0.005
REF
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