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參數(shù)資料
| 型號： | D555 |
| 廠商： | Advanced Linear Devices, Inc. |
| 英文描述： | high speed cmos timer |
| 中文描述： | 高速CMOS計時器 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 35K |
| 代理商： | D555 |
ALD555
Advanced Linear Devices
9-2
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V+
13.2V
Input voltage range
-0.3V to V+ +0.3V
Power dissipation
600 mW
Operating temperature range
PA,SA package
0
°C to +70°C
DA package
-55
°C to +125°C
Storage temperature range
-65
°C to +150°C
Lead temperature, 10 seconds
+260
°C
OPERATING ELECTRICAL CHARACTERISTICS
TA = 25
oC V+ = +5V unless otherwise specified
Parameter
Symbol
Min
Typ
Max
Unit
Test Conditions
Supply Voltage
V+
212
V
Supply Current
IS
100
180
A
Outputs Unloaded
Timing error / Astable mode
Initial Accuracy
terr
1.0
2.2
%
C = 0.1
F
Drift with Temperature 1
t/T
10.0
ppm/
°CRA = 1K
Drift with Supply Voltage 1
t/V+
0.1
%/V
RB = 1K
Threshold Voltage
VTH
3.273
3.333
3.393
V
Trigger Voltage
VTRIG
1.607
1.667
1.737
V
Trigger Current 2
ITRIG
.001
0.2
nA
Reset Voltage
VRST
0.4
0.7
1.0
V
Reset Current 2
IRST
.001
0.2
nA
Threshold Current 2
ITH
.001
0.2
nA
Control Voltage Level
VCONT
3.273
3.333
3.393
V
Output Voltage Drop (Low)
VOL
0.2
0.4
V
ISINK = 10mA
Output Voltage Drop (High)
VOH
4.2
V
ISOURCE = -2mA
Rise Time of Output 1
tr
15
30
ns
RL = 10M
Fall Time of Output 1
tf
10
20
ns
CL = 10pF
Discharge Transistor
IDL
.01
nA
Leakage Current
Discharge Voltage Drop
VDISC
0.5
1.0
V
I DISCHARGE = 80mA
0.2
0.4
V
I DISCHARGE = 30mA
Maximum Frequency
RA = 470
Astable Mode
fMAX
1.4
2
MHz
RB = 200
CT = 200pF
Notes:
1 Sample tested parameters.
2
Consists of junction leakage currents with strong temperature dependence.
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