參數(shù)資料
型號： D640G12VI
廠商： Spansion Inc.
英文描述： 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
中文描述： 64兆位（8米× 8位/ 4米x 16位），3.0伏的CMOS只，同步讀/寫閃存
文件頁數(shù)： 36/56頁
文件大?。?/td> 742K
代理商： D640G12VI
34
Am29DL640G
June 6, 2005
DC CHARACTERISTICS
CMOS Compatible
Notes:
1. The I
CC
current listed is typically less than 2 mA/MHz, with OE# at V
IH
.
2. Maximum I
CC
specifications are tested with V
CC
= V
CC
max.
3. I
CC
active while Embedded Erase or Embedded Program is in progress.
4. Automatic sleep mode enables the low power mode when addresses remain stable for t
ACC
+ 30 ns. Typical sleep mode current is
200 nA.
5. Not 100% tested.
Parameter
Symbol
Parameter Description
Test Conditions
Min
Typ
Max
Unit
I
LI
Input Load Current
V
IN
= V
SS
to V
CC
,
V
CC
= V
CC
max
V
CC
= V
CC max
; A9 = 12.5 V
V
OUT
= V
SS
to V
CC
,
V
CC
= V
CC max
V
CC
= V
CC max
; RESET= 12.5 V
±
1.0
μA
I
LIT
A9 Input Load Current
35
μA
I
LO
Output Leakage Current
±
1.0
μA
I
LR
Reset Leakage Current
35
μA
I
CC1
V
CC
Active Read Current
(Notes 1, 2)
CE# = V
IL
,
OE#
=
V
IH
,
Byte Mode
5 MHz
10
16
mA
1 MHz
2
4
CE# = V
IL
,
OE# = V
IH
,
Word Mode
5 MHz
10
16
1 MHz
2
4
I
CC2
I
CC3
I
CC4
V
CC
Active Write Current (Notes 2, 3) CE# = V
IL
,
OE# = V
IH
, WE# = V
IL
V
CC
Standby Current (Note 2)
V
CC
Reset Current (Note 2)
15
30
mA
CE#, RESET# = V
CC
±
0.3 V
RESET# = V
SS
±
0.3 V
V
IH
= V
CC
±
0.3 V;
V
IL
= V
SS
±
0.3 V
0.2
5
μA
0.2
5
μA
I
CC5
Automatic Sleep Mode (Notes 2, 4)
0.2
5
μA
I
CC6
V
CC
Active Read-While-Program
Current (Notes 1, 2)
CE# = V
IL
,
OE# = V
IH
Byte
21
45
mA
Word
21
45
I
CC7
V
CC
Active Read-While-Erase
Current (Notes 1, 2)
CE# = V
IL
, OE# = V
IH
Byte
21
45
mA
Word
21
45
I
CC8
V
CC
Active
Program-While-Erase-Suspended
Current (Notes 2, 5)
CE# = V
IL
, OE# = V
IH
17
35
mA
V
IL
V
IH
Input Low Voltage
–0.5
0.8
V
Input High Voltage
0.7 x V
CC
V
CC
+ 0.3
V
V
HH
Voltage for WP#/ACC Sector
Protect/Unprotect and Program
Acceleration
V
CC
= 3.0 V ± 10%
8.5
9.5
V
V
ID
Voltage for Autoselect and
Temporary Sector Unprotect
V
CC
= 3.0 V
±
10%
11.5
12.5
V
V
OL
V
OH1
Output Low Voltage
I
OL
= 4.0 mA, V
CC
= V
CC min
I
OH
= –2.0 mA, V
CC
= V
CC min
0.45
V
Output High Voltage
0.85 V
CC
V
V
OH2
V
LKO
I
OH
= –100 μA, V
CC
= V
CC min
V
CC
–0.4
2.3
Low V
CC
Lock-Out Voltage (Note 5)
2.5
V
相關(guān)PDF資料
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D640G70PI 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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D640G70VI 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
D640G90PI 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
D640G90VI 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
D640H55VI 制造商:SPANSION 制造商全稱:SPANSION 功能描述:64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory
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