參數(shù)資料
型號(hào): D965-R
廠商: MICRO COMMERCIAL COMPONENTS
元件分類: 小信號(hào)晶體管
英文描述: NPN Plastic-Encapsulate Transistors
中文描述: 5000 mA, 22 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
封裝: PLASTIC PACKAGE-3
文件頁(yè)數(shù): 1/2頁(yè)
文件大?。?/td> 101K
代理商: D965-R
D965-T
D965-R
NPN
Plastic-Encapsulate
Transistors
Features
Power Dissipation: P
CM
=0.75W @ T
amb
=25
Collector Current: I
CM
=5A
x
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
x
Marking
:
D965R/T
Maximum Ratings
Symbol
V
CEO
Collector-Emitter Voltage
V
CBO
Collector-Base Voltage
V
EBO
Emitter-Base Voltage
I
C
Collector Current, Continuous
P
D
Total Device Dissipation
T
J
Operating Junction Temperature
T
STG
Storage Temperature
Rating
Rating
22
42
6.0
5
750
-55 to +150
-55 to +150
Unit
V
V
V
A
mW
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
(I
C
=10mAdc, I
B
=0)
Collector-Base Breakdown Voltage
(I
C
=100
μ
Adc, I
E
=0)
Emitter-Base Breakdown Voltage
(I
E
=100
μ
Adc, I
C
=0)
Collector Cutoff Current
(V
CB
=20Vdc, I
E
=0)
Base Cutoff Current
(V
EB
=3.0Vdc, I
C
=0)
DC Current Gain ( V
CE
=2V, I
C
=0.15mA)
( V
CE
=2V, I
C
=500mA)
( V
CE
=2V, I
C
=2000mA)
Collector-emitter Saturation Voltage
(I
C
=3000mA, I
B
=100mA)
22
---
Vdc
V
(BR)CBO
42
---
Vdc
V
(BR)EBO
6.0
---
Vdc
I
CBO
---
100
nAdc
I
EBO
---
100
nAdc
H
FE
150
340
150
---
950
---
V
CE(sat)
---
0.35
V
Classification of H
FE
@ ( V
CE
=2V, I
C
=500mA)
Rank
Range
340-600
R
T
560-950
omp
onents
20736 Marilla
Street Chatsworth
M C C
TO-92
A
E
B
C
D
G
Revision:
4
200
7
/0
2
/2
3
DIMENSIONS
INCHES
MIN
.170
.170
.550 .590 13.97 14.97
.010
.020
.130
.160
.010
.104
MM
DIM
A
B
C
D
E
G
MAX
.190
.190
MIN
4.33
4.30
MAX
4.83
4.83
NOTE
0.36
3.30
2.44
0.56
3.96
2.64
1
2
3
1.EMITTER
2.COLLECTOR
3.BASE
TM
Micro Commercial Components
www.
mc c semi
.c om
1 of 2
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