參數資料
型號: DA3X101A
廠商: PANASONIC CORP
元件分類: 參考電壓二極管
英文描述: SILICON, VHF BAND, MIXER DIODE
封裝: ROHS COMPLIANT, MINI3-G3-B, 3 PIN
文件頁數: 1/3頁
文件大?。?/td> 282K
代理商: DA3X101A
ZKF00130AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Publication date: October 2009
1
DA3X101A (Tentative)
Silicon epitaxial planar type
For high speed switching circuits
Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Reverse voltage
VR
80
V
Repetitive peak reverse voltage
VRRM
80
V
Forward current
IF
100
mA
Peak forward current
IFM
225
mA
Non-repetitive peak forward surge current *
IFSM
500
mA
Junction temperature
Tj
150
°
C
Storage temperature
Tstg
–55 to +150
°
C
Note) *: 1 t = 1 s
Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Forward voltage
VF
IF = 100 mA
1.2
V
Reverse voltage
VR
IR = 100 A
80
V
Reverse current
IR
VR = 75 V
100
nA
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
2
pF
Reverse recovery time *
trr
IF = 10 mA, VR = 6 V,
Irr = 0.25 × IR 
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 100 MHz
*: trr measurement circuit
90%
tp = 2 s
tr = 0.35 ns
δ =
0.05
10%
tr
tp
trr
VR
IF
t
A
Bias Application Unit (N-50BU)
Pulse Generator
(PG-10N)
Rs = 50
Wave Form Analyzer
(SAS-8130)
Ri = 50
Input Pulse
Output Pulse
IF = 10 mA
VR = 6 V
Irr = 0.25 × IR
Package
Code
Mini3-G3-B
Pin Name
1: Cathode
2: N.C.
3: Anode
Marking Symbol: 20
Internal Connection
1
2
3
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