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參數(shù)資料
| 型號(hào)： | DAC8043FSZ |
| 廠商： | Analog Devices Inc |
| 文件頁數(shù)： | 11/16頁 |
| 文件大?。?/td> | 0K |
| 描述： | IC DAC 12BIT MULT SRL INP 8SOIC |
| 產(chǎn)品培訓(xùn)模塊： | Data Converter Fundamentals DAC Architectures |
| 標(biāo)準(zhǔn)包裝： | 47 |
| 設(shè)置時(shí)間： | 250ns |
| 位數(shù)： | 12 |
| 數(shù)據(jù)接口： | 串行 |
| 轉(zhuǎn)換器數(shù)目： | 1 |
| 電壓電源： | 單電源 |
| 功率耗散（最大）： | 500µW |
| 工作溫度： | -40°C ~ 85°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-SOIC（0.154"，3.90mm 寬） |
| 供應(yīng)商設(shè)備封裝： | 8-SO |
| 包裝： | 管件 |
| 輸出數(shù)目和類型： | 1 電流，單極；1 電流，雙極 |
| 采樣率（每秒）： | 366k |
DAC8043
Rev. E | Page 4 of 16
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
POWER SUPPLY
Supply Voltage
VDD
4.75
5
5.25
V
Supply Current
IDD
Digital inputs = VIH or VIL
500
μA
Digital inputs = 0 V or VDD
100
μA
1 ±1/2 LSB = ±0.012% of full scale.
2 All grades are monotonic to 12 bits over temperature.
3 Using internal feedback resistor.
4 Guaranteed by design and not tested.
5 Applies to IOUT; all digital inputs = 0 V.
6 VREF = 10 V; all digital inputs = 0 V.
7 Calculated from worst-case RREF: IZSE (in LSBs) = (RREF × ILKG × 4096)/VREF.
8 Absolute temperature coefficient is less than 300 ppm/°C.
9 IOUT load = 100 Ω , CEXT = 13 pF, digital input = 0 V to VDD or VDD to 0 V. Extrapolated to LSB; tS = propagation delay (tPD) + 9τ
where τ = measured time constant of the final RC decay.
10 VREF = 0 V, all digital inputs = 0 V to VDD or VDD to 0 V.
11 All digit inputs = 0 V.
12 Calculations from en = √4K TRB
where:
K = Boltzmann constant, J/°K,
R = resistance, Ω,
T = resistor temperature, °K,
B = bandwidth, Hz.
13 Digital inputs are CMOS gates; IIN is typically 1 nA at 25°C.
14 Tested at VIN = 0 V or VDD.
WAFER TEST LIMITS
VDD = 5 V, VREF = 10 V; IOUT = GND = 0 V, TA = 25°C.
Table 2.
DAC8043GBC Limit
Parameter1
Symbol
Conditions
Min
Typ
Max
Unit
STATIC ACCURACY
Resolution
N
12
Bits
Integral Nonlinearity
INL
±1
LSB
Differential Nonlinearity
DNL
±1
LSB
Gain Error
GFSE
Using internal feedback resistor
±2
LSB
Power Supply Rejection Ratio
PSRR
ΔVDD = ±5%
±0.002
%/%
Output Leakage Current (IOUT)
ILKG
Digital inputs = VIL
±5
nA
REFERENCE INPUT
Input Resistance
RIN
7
15
kΩ
DIGITAL INPUTS
Digital Input High
VIH
2.4
V
Digital Input Low
VIL
0.8
V
Input Leakage Current
IIL
VIN = 0 V to VDD
±1
μA
POWER SUPPLY
Supply Current
IDD
Digital inputs = VIN or VIL
500
μA
Digital inputs = 0 V or VDD
100
μA
1 Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed
for standard product dice. Consult a factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.
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