參數(shù)資料
型號(hào): DALC112
廠商: 意法半導(dǎo)體
英文描述: LOW CAPACITANCE DIODE ARRAY FOR ESD PROTECTION
中文描述: 低電容二極管陣列ESD保護(hù)
文件頁(yè)數(shù): 2/3頁(yè)
文件大?。?/td> 31K
代理商: DALC112
Symbol
Parameter
Value
Unit
V
RRM
Peak reversevoltageperdiode
18
V
T
stg
T
j
Storagetemperaturerange
Maximum junctiontemperature
-55 to + 150
150
°
C
°
C
ABSOLUTEMAXIMUM RATINGS
(T
amb
=25
°
C).
Symbol
Parameter
Typ.
Max.
Unit
V
F
Forwardvoltage
I
F
= 50 mA
1.3
V
I
R
Reverseleakage currentper diode
V
R
= 15V
2
μ
A
C
InputcapacitancebetweenLine and GND
V
cc
= 5V, V
RMS
= 30mV, F = 1 MHz
(seefigure 1 below)
7
pF
ELECTRICALCHARACTERISTICS
(T
amb
=25
°
C).
TYPICALAPPLICATION
Vcc
DALC112S1
Fig1 :
Inputcapacitancemeasurement
+V
CC
connected between REF1 and REF2
Input applied :
Vcc = 5V, V
RMS
= 30 mV, F = 1 MHz
G
I/O
V
CC
REF2
REF1
DALC112S1
2/3
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