參數(shù)資料
型號: DALC208SC6
廠商: 意法半導(dǎo)體
英文描述: Switch Mode Power Supply; Output Power:120W; No. of Outputs:1; Output 1 VDC +:24VDC; Output Current 1:5A; Power Supply Mounting:Chassis; Leaded Process Compatible:Yes; Output Current:5A; Output Power Max:120W; Output Voltage:24VDC RoHS Compliant: Yes
中文描述: 低電容二極管陣列
文件頁數(shù): 2/10頁
文件大?。?/td> 164K
代理商: DALC208SC6
Symbol
V
PP
Parameter
Value
15
8
9
9
V
REF2
V
REF1
200
700
Unit
kV
IEC1000-4-2, air discharge
IEC1000-4-2, contact discharge
Peak reverse voltage per diode
Reference voltage gap between V
REF2
and V
REF1
Maximum operating signal input voltage
Minimum operating signal input voltage
Continuous forward current (single diode loaded)
Repetitive peak forward current (t
p
= 5
μ
s, F = 50 kHz)
Surge non repetitive forward current -
rectangular waveform (see curve on figure 1)
t
p
= 2.5
μ
s
t
p
= 1 ms
t
p
= 100 ms
Storage temperature range
Maximum junction temperature
V
RRM
V
REF
V
In
max.
V
In
min.
I
F
I
FRM
I
FSM
V
V
V
V
mA
mA
6
2
1
A
T
stg
T
j
-55 to + 150
150
°
C
°
C
ABSOLUTE MAXIMUM RATINGS
(T
amb
= 25°C).
Symbol
V
F
I
R
C
Parameter
Conditions
I
F
= 50 mA
V
R
= 5 V
see note 3
Typ.
Max.
1.2
1
Unit
V
μ
A
pF
Forward voltage
Reverse leakage current per diode
Input capacitance between Line and GND
7
Note 2:
The dynamical behavior is described in the Technical Information section, on page 4.
ELECTRICAL CHARACTERISTICS
(T
amb
= 25°C).
G
REF1
I/O
+V
CC
REF1 connected to GND
REF2 connected to +Vcc
Input applied :
Vcc = 5V, Vsign = 30 mV, F = 1 MHz
REF2
V
R
Note 3:
Input capacitance measurement
Symbol
R
th(j-a)
Parameter
Value
500
Unit
°C/W
Junction to ambient (note 1)
Note 1:
device mounted on FR4 PCB with recommended footprint dimensions.
THERMAL RESISTANCE
DALC208SC6
2/10
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